Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 2002-2005

  Cordier, Y ^a   Baron, N ^a,b   Chenot, S ^a   Vennegues P ^a   Tottereau, O ^a   Leroux, M ^a   Semond, F ^a   Massies, J ^a  

^a CRHEA CNRS   (France)

^b Picogiga International   (France)

Author keywords

A1. Molecular beam epitaxy; B1. Nitrides; B2. Stress relaxation; B3. High electron mobility transistors

Indexed keywords

CRYSTAL GROWTH; ELECTRON MOBILITY; GALLIUM NITRIDE; GROWTH TEMPERATURE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; RESIDUAL STRESSES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; STRESS RELAXATION;

A1. MOLECULAR BEAM EPITAXY; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; B1. NITRIDES; B2. STRESS RELAXATION; B3. HIGH ELECTRON MOBILITY TRANSISTORS; DISLOCATION FILTERING; ELECTRICAL QUALITIES; GAN LAYERS; HETEROSTRUCTURES; MISMATCH STRESS; NITROGEN PLASMAS; NITROGEN SOURCES; RELAXATION RATES; STRAIN ENGINEERINGS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 63349112505     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.066     Document Type: Article

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