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Volumn 8, Issue 2, 2011, Pages 447-449
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Low temperature (down to 450 °C) annealed TiAl contacts on N-type gallium nitride characterized by differential scanning calorimetry
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Author keywords
Differential scanning calorimetry; Gallium nitride; Ohmic contact; TiAl
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Indexed keywords
ALUMINUM ALLOYS;
ANNEALING;
BINARY ALLOYS;
CALORIMETERS;
DIFFERENTIAL SCANNING CALORIMETRY;
ELECTRIC CONTACTORS;
GALLIUM NITRIDE;
III-V SEMICONDUCTORS;
NITRIDES;
OHMIC CONTACTS;
TEMPERATURE;
ANNEALING TEMPERATURES;
COMPOUNDS FORMATION;
OHMIC CONTACT FORMATION;
SCHOTTKY CONTACTS;
SOLID-SOLID REACTION;
SPECIFIC CONTACT RESISTIVITY;
STOICHIOMETRIC RATIO;
TIAL;
TITANIUM ALLOYS;
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EID: 79951703891
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.201000597 Document Type: Article |
Times cited : (6)
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References (9)
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