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Volumn 8, Issue 2, 2011, Pages 447-449

Low temperature (down to 450 °C) annealed TiAl contacts on N-type gallium nitride characterized by differential scanning calorimetry

Author keywords

Differential scanning calorimetry; Gallium nitride; Ohmic contact; TiAl

Indexed keywords

ALUMINUM ALLOYS; ANNEALING; BINARY ALLOYS; CALORIMETERS; DIFFERENTIAL SCANNING CALORIMETRY; ELECTRIC CONTACTORS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NITRIDES; OHMIC CONTACTS; TEMPERATURE;

EID: 79951703891     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000597     Document Type: Article
Times cited : (6)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.