High current bulk GaN Schottky rectifiers

Solid-State Electronics

Volumn 46, Issue 12, 2002, Pages 2169-2172

  Ip, K ^a   Baik, K H ^a   Luo, B ^b   Ren, F ^b   Pearton, S J ^a   Park, S S ^c   Park, Y J ^c   Zhang, A P ^d  

^a UNIVERSITY OF FLORIDA   (United States)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d GENERAL ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC UTILITIES; GALLIUM NITRIDE; LEAKAGE CURRENTS; SILICA; SUBSTRATES;

SCHOTTKY RECTIFIERS;

ELECTRIC RECTIFIERS;

EID: 0036889920     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00187-9     Document Type: Article

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