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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 1, 2010, Pages 112-115

Ni based planar Schottky diodes on gallium nitride (GaN) grown on sapphire

(4) Ménard, Olivier a,b Cayrel, Frédéric a Collard, Emmanuel b Alquier, Daniel a

a UNIVERSITÉ DE TOURS (France)

b STMICROELECTRONICS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TIME; BARRIER HEIGHTS; IDEALITY FACTORS; LIFT-OFF PROCESS; METALLIC CONTACTS; MOCVD; PLANAR SCHOTTKY DIODES; PROCESS PARAMETERS; SCHOTTKY; SCHOTTKY CONTACTS; SCHOTTKY STRUCTURES;

ARGON; CHEMICAL VAPOR DEPOSITION; DISTILLATION; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTOR DIODES; SURFACE CLEANING;

SCHOTTKY BARRIER DIODES;

EID: 77949730354 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200982621 Document Type: Conference Paper

Times cited : (17)

References (9)

1
- 77949727725
- M. E. Lin, S. Strite, and H. Morkoc, in: The Encyclopedia of Advanced Materials, D. Bloor, M. C. Fleming, R. I. Brook, and S. Mahajan (eds.), R. W. Cahn (senior ed.) (Pergamon Press, 1994), pp. 79-86.
- M. E. Lin, S. Strite, and H. Morkoc, in: The Encyclopedia of Advanced Materials, D. Bloor, M. C. Fleming, R. I. Brook, and S. Mahajan (eds.), R. W. Cahn (senior ed.) (Pergamon Press, 1994), pp. 79-86.

2
- 0000703134
- R. Gaska, J.W. Yang, A. Osinsky, Q. Chen, M.A. Khan, A.O. Orlov, G.L. Snider, and M.S. Shur, Appl. Phys. Lett. 72, 707 (1998).
- (1998) Appl. Phys. Lett , vol.72 , pp. 707
- Gaska, R.¹ Yang, J.W.² Osinsky, A.³ Chen, Q.⁴ Khan, M.A.⁵ Orlov, A.O.⁶ Snider, G.L.⁷ Shur, M.S.⁸

3
- 0000110525
- Z.Z. Bandic, P.M. Bridger, E.C. Piquette, T.C. McGill, R.P. Vaudo, V.M. Phanse, and J.M. Redwing, Appl. Phys. Lett. 74, 1266 (1998).
- (1998) Appl. Phys. Lett , vol.74 , pp. 1266
- Bandic, Z.Z.¹ Bridger, P.M.² Piquette, E.C.³ McGill, T.C.⁴ Vaudo, R.P.⁵ Phanse, V.M.⁶ Redwing, J.M.⁷

4
- 77949759547
- S.P. DenBaars, T. Katona, P. Cantu, A. Hanlon, S. Keller, M. Schmidt, T. Margalith, M. Pattisson, C. Moe, J. Speck, and S. Nakamura. Electron Devices Meeting, Technical Digest. IEEE Internat. 16.1.1 16.1.3 (2003).
- S.P. DenBaars, T. Katona, P. Cantu, A. Hanlon, S. Keller, M. Schmidt, T. Margalith, M. Pattisson, C. Moe, J. Speck, and S. Nakamura. Electron Devices Meeting, Technical Digest. IEEE Internat. 16.1.1 16.1.3 (2003).

5
- 33244497177
- IEEE
- T. Palacios, A. Chakraborty, S. Heikman, S. Keller, S.P. DenBaars, and U.K. Mishra. Electron Device Lett., IEEE 27(1), 13-15 (2006).
- (2006) Electron Device Lett , vol.27 , Issue.1 , pp. 13-15
- Palacios, T.¹ Chakraborty, A.² Heikman, S.³ Keller, S.⁴ DenBaars, S.P.⁵ Mishra, U.K.⁶

6
- 33947188538
- C.P. Chan, J. Gao, T.M. Yue, C.Ng. Surya, A.B. Djuric, P.C.-K. Liu, and M. Li. IEEE Trans. Electron Devices 53(9), 2266-2272 (2006).
- (2006) IEEE Trans. Electron Devices , vol.53 , Issue.9 , pp. 2266-2272
- Chan, C.P.¹ Gao, J.² Yue, T.M.³ Surya, C.N.⁴ Djuric, A.B.⁵ Liu, P.C.-K.⁶ Li, M.⁷

7
- 0033149491
- T. Tsuruoka, M. Kawasaki, S. Ushioda, R. Franchy, Y. Naoi, T. Sugahara, S. Sakai, and Y. Shintani, Surf. Sci. 427/428, 257-261 (1999).
- (1999) Surf. Sci , vol.427-428 , pp. 257-261
- Tsuruoka, T.¹ Kawasaki, M.² Ushioda, S.³ Franchy, R.⁴ Naoi, Y.⁵ Sugahara, T.⁶ Sakai, S.⁷ Shintani, Y.⁸

8
- 0842346276
- Lu Nai-Xia, Li Jun-Qian, Xu Yi-Jun, Chen Wen-Kai, and Zhang Yong-Fan, J. Mol. Struct. (Theochem.) 668, 51-55 (2004).
- (2004) J. Mol. Struct. (Theochem.) , vol.668 , pp. 51-55
- Lu, N.-X.¹ Li, J.-Q.² Xu, Y.-J.³ Chen, W.-K.⁴ Zhang, Y.-F.⁵

9
- 77949735749
- O. Menard, F. Cayrel, E. Collard, and D. Alquier, Silicon Carbide and Related Materials, 2008 (p. 955).
- (2008) Silicon Carbide and Related Materials , pp. 955
- Menard, O.¹ Cayrel, F.² Collard, E.³ Alquier, D.⁴

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