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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 7 A, 2003, Pages 4193-4196

Study of titanium tungsten nitride and tungsten nitride Schottky contacts on n-GaN

(6) Lee, Cheng Shih a Chang, Edward Yi a Chang, Li a Fang, Chao Yi a Huang, Yao Lin a Huang, Jian Sheng a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

Annealed; Barrier height; Ideality factor; Schottky; Sputtering

Indexed keywords

DETERIORATION; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS; SPUTTER DEPOSITION; TEMPERATURE; TITANIUM COMPOUNDS; TUNGSTEN COMPOUNDS;

TITANIUM TUNGSTEN NITRIDE; TUNSTEN NITRIDE SCHOTTKY;

GALLIUM NITRIDE;

EID: 0141719718 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.4193 Document Type: Article

Times cited : (18)

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