Schottky barrier properties of various metals on n-type GaN

Semiconductor Science and Technology

Volumn 11, Issue 10, 1996, Pages 1464-1467

  Schmilz, A C ^a   Ping, A T ^a   Asif Khan, M ^b   Chen, Q ^b   Yang, J W ^b   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b APA Optronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHARACTERIZATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; EPITAXIAL GROWTH; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTOR DEVICE MANUFACTURE; TEMPERATURE MEASUREMENT;

BARRIER HEIGHTS; CAPACITANCE VOLTAGE TECHNIQUES; CURRENT VOLTAGE TEMPERATURE; N TYPE GALLIUM NITRIDE EPITAXIAL LAYERS; NORDE PLOT; RICHARDSON CONSTANTS; SCHOTTKY BARRIER;

METALLIC FILMS;

EID: 0030262521     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/10/002     Document Type: Article

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