Evidence of electrical activity of extended defects in 3C-SiC grown on Si

Applied Physics Letters

Volumn 96, Issue 14, 2010, Pages

  Song, X ^a,b   Michaud, J F ^a   Cayrel, F ^a   Zielinski, M ^c   Portail, M ^d   Chassagne, T ^c   Collard, E ^b   Alquier, D ^a  

^a UNIVERSITÉ DE TOURS   (France)

^b STMICROELECTRONICS   (France)

^c SAVOIE TECHNOLAC   (France)

^d CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-SECTIONAL SCANNING; ELECTRICAL ACTIVITIES; ELECTRICAL BEHAVIORS; EXTENDED DEFECT; LAYER RESISTANCE; NITROGEN-DOPED; SCANNING SPREADING RESISTANCE MICROSCOPY; SILICON SUBSTRATES;

MAPPING; MAPS; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

DEFECTS;

EID: 77951153502     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3383233     Document Type: Article

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