SCOPUS 정보 검색 플랫폼

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 879-884

Active devices for power electronics : SiC vs III-N compounds The case of Schottky rectifiers

(5) Brylinski, C a Menard O b,c Thierry Jebali, N a,c Cayrel, F b Alquier, D b

a UNIVERSITÉ CLAUDE BERNARD LYON 1 (France)

b Lab de Micro Electron de Puissance (France)

c STMICROELECTRONICS (France)

Author keywords

GaN power devices; GaN rectifiers; Power electronics; SiC rectifiers

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC RECTIFIERS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; OHMIC CONTACTS; POWER ELECTRONICS; SAPPHIRE; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; WIDE BAND GAP SEMICONDUCTORS;

ENERGY SUPPLY NETWORKS; ENGINEERING DEVICES; GAN POWER DEVICES; MANUFACTURING ISSUE; POWER ELECTRONICS DEVICES; REVERSE LEAKAGE CURRENT; SCHOTTKY RECTIFIERS; SILICON SUBSTRATES;

SUBSTRATES;

EID: 77955458460 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.645-648.879 Document Type: Conference Paper

Times cited : (4)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.