Novel 600 V GaN Schottky diode delivering SiC performance at Si prices

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn 1, Issue , 2005, Pages 311-314

  Cohen, Isaac ^a   Zhu, Ting Gang ^b   Liu, Linlin ^b   Murphy, Michael ^b   Pophristic, Milan ^b   Pabisz, Marek ^b   Gottfried, Mark ^b   Shelton, Bryan S ^b   Peres, Boris ^b   Ceruzzi, Alex ^b   Stall, Rick A ^b  

^a Lambda   (United States)

^b EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAN SCHOTTKY DIODES; LOWER OPERATING TEMPERATURE; SI-BASED CONFIGURATION; SIC-BASED DEVICES;

GALLIUM NITRIDE; POWER CONVERTERS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON;

SEMICONDUCTOR DIODES;

EID: 33745000074     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2005.1452943     Document Type: Conference Paper

References (2)

1. C. Miesner, R. Rupp, H. Kapels, M. Krach, and L. Zverev, "thinQ! Silicon Carbide Schottky Diodes: An SMPS Circuit Designer's Dream Coomes True!," available on the Infineon website at: http://www.infineon.com/ cmc_upload/documents/027/313/WhitePaper_SiC.pdf.
2. SiC Schottky diode, Cree data sheet CSD06060, available on the Cree, Inc. website at: http://www.cree.com/ftp/pub/CSD06060.pdf.