Issues concerning the preparation of ohmic contacts to n-GaN

Solid-State Electronics

Volumn 45, Issue 9, 2001, Pages 1597-1605

  Pelto, Christopher M ^a   Austin Chang, Y ^a   Chen, Yong ^b   Williams, R Stanley ^b  

^a University of Wisconsin Madison   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

Aluminum; Annealing; Electrical characteristics; GaN; NiAl; Ohmic contacts; Oxidation; Processing; Titanium; Transmission line model

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; OXIDATION; PHOTONS; SEMICONDUCTING GALLIUM COMPOUNDS; TITANIUM COMPOUNDS; TRANSMISSION LINE THEORY;

PHOTONIC DEVICES;

OHMIC CONTACTS;

EID: 0035447623     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00163-0     Document Type: Article

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