Materials challenges for sub-20-nm lithography

Journal of Micro/Nanolithography, MEMS, and MOEMS

Volumn 10, Issue 3, 2011, Pages

  Thackeray, James W ^a  

^a Dow Electronic Materials   (United States)

Author keywords

Chemical amplification; Diffusion; Extreme ultraviolet; Polymer bound PAG; Resists

Indexed keywords

NOISE POLLUTION; PHOTORESISTS; QUANTUM YIELD;

ACID DIFFUSION; ACID GENERATION; CHEMICAL AMPLIFICATION; CHEMICALLY AMPLIFIED RESIST; CONTINUOUS IMPROVEMENTS; EXTREME ULTRAVIOLET; HIGH RESOLUTION; PATTERN COLLAPSE; POLYMER-BOUND PAG; RESIST MATERIALS; RESIST SYSTEMS; RESISTS;

POLYMERS;

EID: 80055052516     PISSN: 19325150     EISSN: 19325134     Source Type: Journal    
DOI: 10.1117/1.3616067     Document Type: Article

References (49)

1. R. R. Kunz, R. D. Allen, W. D. Hinsberg, and G. M. Wallraff, "Acidcatalyzed single-layer resists for ArF lithography," Opt. Eng. 32, 2363-2367 (1993).
2. T. I.Wallow, M. Rayasam, M. Yamaguchi, Y. Yamada, R. Kim, J. Kye, and H. J. Levinson, "Cure-induced photoresist distortions in double patterning," J. Micro. Nanolith. MEMS MOEMS 8, 011010 (2009).
3. S. Tarutani, T. Hideaki, and S. Kamimura, "Development of materials and processes for negative tone development toward 32-nm node 193-nm immersion double-patterning process," Proc. SPIE 7273, 72730C (2009).
4. S. Kang, M. Reilly, T. Penniman, R. Bell, K. Spizuoco, L. Joesten, and Y. C. Bae, "Sub 30 nm node contact hole patterning using immersion single exposure with negative tone development," J. Photopoly. Sci. Tech. 23(2), 211-216 (2010).
5. J.W. Thackeray, R. A. Nassar, R. Brainard, D. Goldfarb, T.Wallow, Y. Wei, J. Mackey, P. Naulleau, B. Pierson, and H. H. Solak, "Chemically amplified resists resolving 25 nm 1:1 line: space features with EUV lithography," Proc. SPIE 6517, 651719 (2007).
6. J.W. Thackeray, R. A. Nassar, K. Spear-Alfonso, R. Brainard, D. Goldfarb, T. Wallow, Y. Wei, W. Montgomery, K. Petrillo, O. Wood, C.-S Koay, J. Mackey, P. Naulleau, B. Pierson, and H. Solak, "Pathway to sub-30 nm resolution in EUV lithography," J. Photopoly. Sci. Tech. 20(3), 411-418 (2007).
7. M. Thiyagarajan, K. Dean, and K. Gonsalves, "Improved lithographic performance for EUV resists based on polymers with photoacid generators in the backbone," J. Photopolym. Sci Tech. 18(6), 737-741 (2005).
8. C. Magg and M. J. Lercel "Chemically amplified resists for electronbeam projection lithography mask fabrication," Proc. SPIE 3997, 276-283 (2000).
9. D. P. Mancini, D. J. Resnick, K. J. Nordquist, W. J. Dauksher, J. W. Thackeray, and M. A. McCord, "Development of two new positive DUV photoresists for use with direct-write e-beam lithography," Proc. SPIE 2723, 112-121 (1996). (Pubitemid 34981951)
10. Gordon S.W. Craig and Paul F. Nealey, "Directed assembly of block copolymers on lithographically defined surfaces," Proc. SPIE 7637, 76370L (2010).
11. W. Hinsberg, J. Cheng, H.-C. Kim, and D. P. Sanders, "Self- assembling materials for lithographic patterning: overview, status, and moving forward," Proc. SPIE 7637, 76370G (2010).
12. Y. Borodovsky, "Marching to the beat of Moore's Law," Proc. SPIE 6153, 615301 (2006).
13. S. F. Wanat, R. R. Plass, and M. Dalil Rahman, "Novolak resins and the microelectronic revolution," J. Micro. Nanolith. MEMS MOEMS 7, 033008 (2008).
14. M. Borzo, J. J. Rafalko, and R. R. Dammel, "Molecular bases for the interaction between novolaks and diazonaphthoquinone photoactive compounds," Proc. SPIE 2195, 673-684 (1994).
15. A. Pandya, P. Trefonas III, A. Zampini, and P. Turci, "Highly regioselective PACs for i-line resist design: synthetic reaction model, dissolution kinetics and lithographic response," Proc. SPIE 2195, 559-575 (1994).
16. L. E. Bogan, Jr. and K. A. Grazian, "Optimization of the absorbance of novolak resin films at 248 nm," Proc. SPIE 1262, 180-187 (1990).
17. H. Ito, "Chemically amplified resists: past, present, and future," Proc. SPIE 3678, 2 (1999).
18. H. Ito, G. Breyta, D. Hofer, R. Sooriyakumaran, K. Petrillo, and D. Seeger, "Environmentally stable chemical amplification positive resist: principle, chemistry, contamination resistance, and lithographic feasibility," J. Photopolym. Sci. Technol. 7, 433-448 (1994).
19. A. A. Lamola, C. R. Szmanda, and J. W. Thackeray, "Chemically amplified resists," Solid State Technol., 53-60 (August 1991).
20. N. S. Thane, J. S. Hargreaves, Y. Takamori, E. M. Apelgren, P. Freeman, V. A. Deshpande, and K. L. Holland "Positive DUV resist (APEX-E) by IBM for SVGL micrascan," Proc. SPIE 1926, 208-227 (1993).
21. H. Ito, "Rise of chemical amplification resists from laboratory curiosity to paradigm enabling Moore's law," Proc. SPIE 6923, 692302 (2008).
22. Y. Kaimoto, K. Nozaki, S. Takechi, and N. Abe, "Alicyclic polymer for ArF and KrF excimer resist based on chemical amplification," Proc. SPIE 1672, 66-73 (1992).
23. A. Tritchkov, P. Glotov, S.Komirenko, E. Sahouria, A. Torres, A. Seoud, and V. Wiaux, "Double-patterning decomposition, design compliance, and verification algorithms at 32 nm hp," Proc. SPIE 7122, 71220S (2008).
24. H. J. Levinson, "Extreme ultraviolet lithography's path to manufacturing," J. Micro. Nanolith. MEMS MOEMS 8, 041501 (2009).
25. G. M. Gallatin, P. Naulleau, D. Niakoula, R. Brainard, E. Hassanein, R. Matyi, J. Thackeray, K. Spear, and K. Dean, "Resolution, LER, and sensitivity limitations of photoresists," Proc. SPIE 6921, 69211E (2008).
26. J. H. Oh, D. C. Seo, H. S. Joo, S. D. Jung, J. H. Kim, S. J. Lee, R. R. Park, J. H. Han, and J. H. Park, "The noble resists composed of cationic and anionic polymerizable PAGs," Proc. SPIE 7140, 714031 (2008).
27. S. Tarutani, H. Tsubaki, H. Takahashi, T. Itou, K. Matsunaga, G. Shiraishi, and T. Itani, "Study on acid diffusion length effect with PAGblended system and anion-bounded polymer system," Proc. SPIE 7639, 76391O (2010).
28. J. J. Biafore, M. D. Smith, C. A. Mack, J. W. Thackeray, R. Gronheid, S. A. Robertson, T. Graves, and D. Blankenship, "Statistical simulation of photoresists at EUV and ArF," Proc. SPIE 7273, 727343 (2009).
29. T.Kozawa and S. Tagawa, "Radiation chemistry in chemically amplified resists," Jnp. J. Appl. Phys. 49, 030001 (2010).
30. Y.-J.Kwark, J. P. Bravo-Vasquez,C.K.Ober,H. B. Cao,H.Deng, andR. Meagley, "Novel silicon-containing polymers as photoresist materials for EUV lithography," Proc. SPIE, 5039, 1204-1211 (2003).
31. Y.-J. Kwark, J. P. Bravo-Vasquez, M. Chandhok, H. Cao, H. Deng, E. Gullikson, and C. K. Ober, "Absorbance measurement of polymers at extreme UV wavelength: correlation between experimental and theoretical calculations," J. Vac. Sci. Tech. B, 24(4), 1822-1826 (July/August 2006). (Pubitemid 44140791)
32. J. P. Bravo-Vasquez, Y.-J. Kwark, C. K. Ober, H. B. Cao, H. Deng, and R. Meagley, "Silicon backbone polymers as EUV resists," Proc. SPIE, 5376, 739-745 (2004).
33. D. van Steenwinckel, J. H. Lammers, L. H. Leunissen, and J. A. J. M. Kwinten, "Lithographic importance of acid diffusion in chemically amplified resists," Proc. SPIE 5753, 269-280 (2005). (Pubitemid 41275569)
34. M. D. Smith, J. D. Byers, and C. A. Mack, "The lithographic impact of resist model parameters," Proc. SPIE 5376, 322-332 (2004).
35. W. D. Hinsberg, F. A. Houle, M. I. Sanchez, J. A. Hoffnagle, G. M. Wallraff, D. R. Medeiros, G.M. Gallatin, and J. L. Cobb, "Extendability of chemically amplified resists: another brick wall?" Proc. SPIE 5039, 1-14 (2003).
36. W. D. Hinsberg, F.A.Houle, M. I. Sanchez, andG.M.Wallraff, "Chemical and physical aspects of the post exposure baking process used for positive chemically amplified resists," IBM J. Res. Devel. 45(5), 1-14 (2001).
37. R. D. Allen, P. J. Brock, Y.-H. Na, M. H. Sherwood, H. D. Truong, G. M. Wallraff, M. Fujiwara, and K. Maeda, "Investigation of Polymerbound PAGs: synthesis, characterization and initial structure/property relationships of anion-bound resists," J. Photopol. Sci. Tech. 22(1) 25-31 (2009).
38. J. Han, J. H. Oh, H. S. Joo, H. S. Lim, S. D. Cho, J. B. Shin, S. J. Park, and D. C. Seo, "Studies of acid diffusion of anionic or cationic polymer bound PAG," presented at the EUV Sympo. Chiba, Japan (2010).
39. J.W. Thackeray,M.Wagner, S. J. Hang, and J. Biafore, "Understanding the role of acid vs. electron blur in EUV resist materials," J. Photopol. Sci. Tech 23(5), 631-638 (2010).
40. S. A. George, P. P. Naulleau, S. Rekawa, E. Gullikson, and C. D. Kemp, "Estimating the out-of-band radiation flare levels for extreme ultraviolet lithography," J. Micro. Nanolith. MEMS MOEMS 8, 041502 (2009).
41. G. F. Lorusso, F. Van Roey, E. Hendrickx, G. Fenger, M. Lam, C. Zuniga, M. Habib, H. Diab, and J. Word, "Flare in extreme ultraviolet lithography: metrology, out-of-band radiation, fractal point-spread function, and flaremap calibration," J. Micro. Nanolith.MEMSMOEMS 8, 041505 (2009).
42. J. M. Roberts, R. L. Bristol, T. R. Younkin, T. H. Fedynyshyn, D. K. Astolfi, and A. Cabral, "Sensitivity of EUV resists to out-of-band radiation," Proc. SPIE 7273, 72731W (2009).
43. V. Jain, S. M. Coley, J. J. Lee, M. D. Christianson, D. J. Arriola, S. J. Kang, M. D.Wagner, K. Spear-Alfonso, D. Valeri, and J.W. Thackeray, "Impact of polymerization process on LWR of an EUV resist," Proc. SPIE 7969, 796912 (2011).
44. I. Pollentier, A.-M. Goethals, R. Gronheid, J. Steinhoff, and J. Van Dijk, "Characterization of EUV optics contamination due to photoresist related outgassing," Proc. SPIE 7636, 76361W (2010).
45. C. Koh, J. Georger, L. Ren, G. Huang, F. Goodwin, S. Wurm, D. Ashworth, W. Montgomery, B. Pierson, J.-O. Park, and P. Naulleau, "Characterization of promising resist platforms for sub-30-nm HP manufacturability and EUV CAR extendibility study," Proc. SPIE 7636, 763604 (2010).
46. V. Auzelyte, C. Dais, P. Farquet, D. Grützmacher, L. J. Heyderman, F. Luo, S. Olliges, C. Padeste, P. K. Sahoo, T. Thomson, A. Turchanin, C. David, andH.H. Solak, "Extreme ultraviolet interference lithography at the Paul Scherrer Institut," J. Micro. Nanolith. MEMS MOEMS 8, 021204 (2009).
47. H. H. Solak, D. He, W. Li, and F. Cerrina, "Nanolithography using extreme ultraviolet lithography interferometry: 19 nm lines and spaces," J. Vac. Sci. Technol. B 17(6), 3052-3057 (1999).
48. H. H. Solak and Y. Ekinci, "Bit-array patterns with density over 1 Tbit/in.-sup 2- fabricated by extreme ultraviolet interference lithography," J. Vac. Sci. Technol. B 25(6), 2123-2126 (2007). (Pubitemid 350255851)
49. H.H. Solak, I. Y. Ekinc, P. S. Käser, and S. Park, "Photon-beam lithography reaches 12.5 nm half-pitch resolution," J. Vac. Sci. Technol. B 25(1), 91-95 (2007). (Pubitemid 46512007)