The lithographic impact of resist model parameters

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5376, Issue PART 1, 2004, Pages 322-332

  Smith, Mark D ^a,b   Byers, Jeffrey D ^a   Mack, Chris A ^a  

^a KLA TENCOR CORPORATION   (United States)

^b NONE   (United States)

Author keywords

Lithography simulation; Photoresist modeling; PROLITH

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; LITHOGRAPHY; MOLECULAR DYNAMICS; MONTE CARLO METHODS; OPTIMIZATION; QUANTUM THEORY; SURFACE CHEMISTRY;

LITHOGRAPHY SIMULATION; PHOTORESIST MODELING; QUENCHER DIFFUSIVITY;

PHOTORESISTS;

EID: 3843112153     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.537581     Document Type: Conference Paper

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