Lithographic importance of acid diffusion in chemically amplified resists

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5753, Issue I, 2005, Pages 269-280

  Van Steenwinckel, D ^a   Lammers, J H ^a   Leunissen, L H A ^b   Kwinten, J A J M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b MEC   (Belgium)

Author keywords

Acid diffusion; Chemically amplified photoresist; Contrast; Exposure latitude; Line edge roughness

Indexed keywords

ACIDS; CHARACTERIZATION; DIFFUSION IN LIQUIDS; PHOTORESISTS; REDUCTION; SEMICONDUCTOR MATERIALS; THROUGHPUT;

ACID DIFFUSION; CHEMICALLY AMPLIFIED RESISTS; CONTRAST; EXPOSURE LATITUDE; LINE EDGE ROUGHNESS;

LITHOGRAPHY;

EID: 24644465017     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.598677     Document Type: Conference Paper

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