Statistical simulation of resist at EUV and ArF

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7273, Issue , 2009, Pages

  Biafore, John J ^a   Smith, Mark D ^a   Mack, Chris A ^b   Thackeray, James W ^c   Gronheid, Roel ^d   Robertson, Stewart A ^a   Graves, Trey ^a   Blankenship, David ^a  

^a KLA Tencor Austin   (United States)

^b Lithogurucom ^*  (United States)

^c ROHM AND HAAS COMPANY   (United States)

^d IMEC   (Belgium)

Author keywords

Acid shot noise; Computational lithography; Line edge roughness; Photoresist; Resist modeling; Simulation; Stochastic modeling

Indexed keywords

COMPUTATIONAL LITHOGRAPHY; LINE EDGE ROUGHNESS; RESIST MODELING; SIMULATION; STOCHASTIC MODELING;

ACIDS; PHOTORESISTORS; PHOTORESISTS; RANDOM PROCESSES; ROUGHNESS MEASUREMENT; SHOT NOISE; SIMULATORS; STOCHASTIC CONTROL SYSTEMS; SURFACE TREATMENT; ULTRAVIOLET DEVICES;

ELECTRON BEAM LITHOGRAPHY;

EID: 65849102015     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.813551     Document Type: Conference Paper

References (6)

1. Mack, C. A., [Fundamental Principles of Optical Lithography], Wiley, 237 (2007)
2. Turro, N. J., [Modern Molecular Photochemistry], University Science Books, 30-37 (1991)
3. Kozawa, T. "Point-spread Function for the Calculation of Acid Distribution in Chemically-Amplified Resists for Extreme Ultraviolet Lithography", Japanese Journal of Applied Physics 027001, (2008)
4. Beiser, A., [Concepts of Modern Physics], McGraw-Hill, 80-85 (2003)
5. Joy, D., [Monte Carlo Modeling for Electron Microscopy and Microanalysis], Oxford University Press, 25-50 (1995)
6. [6] Biafore, John J. "Mechanistic Simulation of Line-Edge Roughness", Proc. SPIE 6519, (2007) (Pubitemid 47551053)