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Volumn 18, Issue 6, 2005, Pages 737-741

Improved lithographic performance for EUV resists based on polymers having a photoacid generator (PAG) in the backbone

Author keywords

Line Edge Roughness; Poly(HOST co EAMA co PAG); Polymer bound PAG

Indexed keywords


EID: 33745629472     PISSN: 09149244     EISSN: 13496336     Source Type: Journal    
DOI: 10.2494/photopolymer.18.737     Document Type: Article
Times cited : (66)

References (22)
  • 2
    • 33846279196 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors ITRS, Semiconductor Industry Association, San Jose, CA
    • International Technology Roadmap for Semiconductors (ITRS) 2002 update (Semiconductor Industry Association, San Jose, CA, 2002).
    • (2002) 2002 update
  • 21
    • 33846295352 scopus 로고    scopus 로고
    • http://euvl.com/summit/


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.