Characterization of promising resist platforms for sub-30-nm HP manufacturability and EUV CAR extendibility study

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7636, Issue , 2010, Pages

  Koh, Chawon ^a   Georger, Jacque ^a   Ren, Liping ^a   Huang, George ^a   Goodwin, Frank ^a   Wurm, Stefan ^a   Ashworth, Dominic ^a   Montgomery, Warren ^a   Pierson, Bill ^b   Park, Joo On ^c   Naulleau, Patrick ^d  

^a SEMATECH   (United States)

^b ASML US Inc   (United States)

^c SAMSUNG Electronics   (South Korea)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

ADT(alpha demo tool); CAR extendibility; chemically amplified resist; Extreme ultraviolet lithography; sub 30 nm HP manufacturability

Indexed keywords

CAR EXTENDIBILITY; CHEMICALLY AMPLIFIED RESIST; DEPTH OF FIELD; ETCH RESISTANCE; EUV RESISTS; EXPOSURE LATITUDE; FULL-FIELD; LINEWIDTH ROUGHNESS; LITHOGRAPHIC PROCESS; LOWER ACIDS; MANUFACTURABILITY; MOLECULAR GLASS; MOLECULAR RESISTS; PHOTOACID GENERATORS; PROCESS WINDOW; RESIDUAL RESISTS;

EXTREME ULTRAVIOLET LITHOGRAPHY; PHOTORESISTORS; PHOTORESISTS; POLYMERS;

LITHOGRAPHY;

EID: 77953425116     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.846629     Document Type: Conference Paper

References (11)

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