Chemically amplified resists resolving 25 nm 1:1 line:Space features with EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6517, Issue PART 1, 2007, Pages

  Thackeray, James W ^a   Nassar, Roger A ^a   Brainard, Robert ^b   Goldfarb, Dario ^c   Wallow, Thomas ^d   Wei, Yayi ^e   Mackey, Jeff ^f   Naulleau, Patrick ^b   Pierson, Bill ^g   Solak, Harun H ^h  

^a ROHM AND HAAS COMPANY   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c IBM MICROELECTRONICS   (United States)

^d ADVANCED MICRO DEVICES   (United States)

^e Qimonda North America   (United States)

^f MICRON TECHNOLOGY INC   (United States)

^g ASML US Inc   (United States)

^h PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

RESIST FACTORS; RESIST SYSTEMS; RESOLUTION CAPABILITY;

ACTIVATION ENERGY; AMPLIFICATION; IMAGE RESOLUTION;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 35148816568     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.712981     Document Type: Conference Paper

References (15)

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