Flare in extreme ultraviolet lithography: Metrology, out-of-band radiation, fractal point-spread function, and flare map calibration

Journal of Micro/Nanolithography, MEMS, and MOEMS

Volumn 8, Issue 4, 2009, Pages

  Lorusso, Gian F ^a   Van Roey, Frieda ^a   Hendrickx, Eric ^a   Fenger, Germain ^b   Lam, Michael ^b   Zuniga, Christian ^b   Habib, Mohamed ^b   Diab, Hesham ^b   Word, James ^b  

^a IMEC   (Belgium)

^b MENTOR GRAPHICS CORPORATION   (United States)

Author keywords

Deep ultraviolet; Extreme ultraviolet lithography; Flare; Flare map calibration; Out of band

Indexed keywords

CALIBRATION; FRACTALS; LITHOGRAPHY; OPTICAL TRANSFER FUNCTION; ULTRAVIOLET DEVICES;

DEEP ULTRAVIOLET; FLARE; FLARE MAP CALIBRATION; FLARE METROLOGY; OUT OF BAND; OUT-OF-BAND RADIATION; POINT-SPREAD FUNCTION; POINT-SPREAD FUNCTIONS;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 70349923607     PISSN: 19325150     EISSN: 19325134     Source Type: Journal    
DOI: 10.1117/1.3238515     Document Type: Article

References (8)

1. G. F. Lorusso, A. M. Goethals, R. Jonckheere, J. Hermans, K. Ronse, A. M. Meyers, I. Kim, A. Niroomand, F. Iwamoto, and D. Ritter, "Extreme ultraviolet lithography at IMEC: Shadowing compensation and flare mitigation strategy," J. Vac. Sci. Technol. B 25(6), 2127-2131 (2007).
2. I. Kim, A. Myers, L. S. Melvin III, B. Ward, G. F. Lorusso, R. Jonckheere, A. M. Goethals, and K. Ronse, "Flare mitigation strategies in extreme ultraviolet lithography," Microelectron. Eng. 85(5-6), 738-743 (2008).
3. A. M. Myers, G. F. Lorusso, I. Kim, A. M. Goethals, R. Jonckheere, J. Hermans, B. Baudemprez, and K. Ronse, "Experimental validation of full-field extreme ultraviolet lithography flare and shadowing corrections," J. Vac. Sci. Technol. B 26(6), 2215 (2008).
4. G. F. Lorusso, J. Hermans, A. M. Goethals, B. Baudemprez, F. Van Roey, A. M. Myers, I. Kim, B. S. Kim, R. M. Jonckheere, A. Niroomand, S. Lok, A. Van Dijk, J.-F. de Marneffe, S. Demuynck, D. Goossens, and K. Ronse, "Imaging performance of the EUV alpha demo tool at IMEC," Proc. SPIE 6921, 69210O (2008).
5. A. M. Goethals, R. Jonckheere, G. F. Lorusso, J. Hermans, and F. Van Roey, "EUV lithography program at IMEC," Proc. SPIE 3838, 651709 (2007).
6. C. G. Krautschik, M. Chandhok, G. Zhang, S. H. Lee, M. Goldstein, E. M. Panning, B. J. Rice, R. L. Bristol, and V. Singh, "Implementing flare compensation for EUV masks through localized mask CD resizing," Proc. SPIE 5037, 58-68 (2003).
7. M. Chandhok, S. H. Lee, C. Krautschik, B. J. Rice, E. Panning, M. GoldStein, and M. Shell, "Determination of the flare specification and methods to meet the CD control requirements for the 32 nm node using EUVL," Proc. SPIE 5374, 86-95 (2004).
8. M. Chandhok, S. H. Lee, and T. Bacuita, "Effects of flare in extreme ultraviolet lithography: learning from the engineering test stand," J. Vac. Sci. Technol. B 22(6), 2966-2969 (2004).