Pathway to sub-30nm resolution in EUV lithography

Journal of Photopolymer Science and Technology

Volumn 20, Issue 3, 2007, Pages 411-418

  Thackeray, James W ^a   Nassar, Roger A ^a   Spear Alfonso, Kathleen ^a   Brainard, Robert ^b   Goldfarb, Dario ^c   Wallow, Thomas ^d   Wei, Yayi ^e   Montgomery, Warren ^b   Petrillo, Karen ^c   Wood, Obert ^d   Koay, Chiew Seng ^c   Mackey, Jeff ^f   Naulleau, Patrick ^b   Pierson, Bill ^g   Solak, Harun H ^h  

^a ROHM AND HAAS COMPANY   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c IBM MICROELECTRONICS   (United States)

^d ADVANCED MICRO DEVICES   (United States)

^e Qimonda North America   (United States)

^f MICRON TECHNOLOGY INC   (United States)

^g ASML US Inc   (United States)

^h PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

Chemically Amplified Resists; EUV lithography; Line Edge Roughness; Outgassing; Resolution

Indexed keywords

EID: 36148946476     PISSN: 09149244     EISSN: 13496336     Source Type: Journal    
DOI: 10.2494/photopolymer.20.411     Document Type: Article

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