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Volumn 7636, Issue , 2010, Pages

Characterization of EUV optics contamination due to photoresist related outgassing

Author keywords

contamination; EUV; outgassing; photoresist qualification; RGA; witness sample

Indexed keywords

ANALYSIS TECHNIQUES; CONTAMINATION GROWTH; EUV LITHOGRAPHY; EUV OPTICS; EXPOSURE TOOL; EXTREME ULTRAVIOLETS; HIGH VOLUME MANUFACTURING; MATERIAL ANALYSIS; OUTGASSING; PHOTORESIST MATERIALS; PRESSURE RISE; RELATED RISK; RESIDUAL GAS ANALYSIS; SOLID BASIS; TEST EQUIPMENTS; TEST METHOD; WITNESS SAMPLE;

EID: 77953378369     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.846842     Document Type: Conference Paper
Times cited : (26)

References (5)
  • 2
    • 57349198296 scopus 로고    scopus 로고
    • Quantitative analysis of EUV resist outgassing
    • Kobayashi, S., Santillan, J., and Itani, T., 'Quantitative analysis of EUV resist outgassing', Proc. SPIE6923, p. 692345 (2008).
    • (2008) Proc. SPIE , vol.6923 , pp. 692345
    • Kobayashi, S.1    Santillan, J.2    Itani, T.3
  • 5
    • 67149133514 scopus 로고    scopus 로고
    • Mirror reflectivity loss and resist outgassing rates
    • presented at, February
    • Harned, N., 'Mirror reflectivity loss and resist outgassing rates', presented at EUVI Optics Lifetime and Contamination TWG (February, 2008).
    • (2008) EUVI Optics Lifetime and Contamination TWG
    • Harned, N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.