Development of two new positive DUV photoresists for use with direct write e-beam lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2723, Issue , 1996, Pages 112-121

  Mancini, David P ^a   Resnick, Douglas J ^a   Nordquist, Kevin J ^a   Dauksher, William J ^a   Thackeray, James W ^a   McCord, Mark ^a  

^a MOTOROLA INC   (United States)

Author keywords

Chemically amplified; Deep UV lithography; Direct write; e beam lithography; Photoresist; UV III; XP 9525; XP 9549

Indexed keywords

DIFFRACTION GRATINGS; EDGE DETECTION; ETCHING; MASKS; PHOTORESISTS; SENSITIVITY ANALYSIS; ULTRAVIOLET RADIATION; X RAY LITHOGRAPHY;

DEEP ULTRAVIOLET (DUV) LITHOGRAPHY;

ELECTRON BEAM LITHOGRAPHY;

EID: 0030313096     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.240461     Document Type: Conference Paper

References (12)

1. Highly sensitive positive electron resists consisting of halogenated Alkyl a-chloropacrylate series polymer materials
2. DUV positive resist system designed for micrascan use
3. Environmentally stable chemical amplification positive resist; Principle, chemistry, contamination resistance and lithographic feasibility
4. Approach toward environmental stabilization of chemical amplification resists
5. Advances in resist technology and processing VIII
6. Effect of using a resin coating on KrF chemically amplified positive resists
7. Influence of polymer properties on airborne chemical contamination of chemically amplified resists
8. High resolution, novolac-based negative tone electron-beam resist
9. Use of positive and negative chemically amplified resists in electron-beam direct-write lithography