Understanding the role of acid vs. electron blur in EUV resist materials

Journal of Photopolymer Science and Technology

Volumn 23, Issue 5, 2010, Pages 631-637

  Thackeray, James W ^a   Wagner, Mike ^a   Kang, Su Jin ^a   Biafore, John ^b  

^a Dow Electronic Materials   (United States)

^b KLA Tencor Austin   (United States)

Author keywords

Diffusion blur; EUV resist; Polymer bound PAG

Indexed keywords

EID: 77957161849     PISSN: 09149244     EISSN: 13496336     Source Type: Journal    
DOI: 10.2494/photopolymer.23.631     Document Type: Article

References (12)

1. D. Attwood, "Soft X-rays and Extreme Ultraviolet Radiation: Principles and Applications" (Cambridge University Press, 1999)
2. "Extreme ultraviolet microexposures at the Advanced Light Source using the 0.3 numerical aperture micro-exposure tool optic", Patrick P. Naulleau, Kenneth A. Goldberg, Erik Anderson, Jason P. Cain, Paul Denham, Keith Jackson, Anne-Sophie Morlens, Seno Rekawa, and Farhad Salmassi, J. Vac. Sci. Technol, B 22, 2962 (2004).
3. "Resist pattern prediction at EUV," John J. Biafore, Mark D. Smith, Eelco van Setten, Tom Wallow, Patrick Naulleau, David Blankenship, Stewart A. Robertson, and Yunfei Deng, Proc. SPIE, 7636, 76360R(2010).
4. "Pattern prediction in EUV resists," John J. Biafore, Mark D. Smith, Tom Wallow, Patrick Nalleau, David Blankenship, and Yunfei Deng, Proc. SPIE, 7520, 7520IP (2009).
5. "Statistical simulation of photoresists at EUV and ArF," John J. Biafore, Mark D. Smith, Chris A. Mack, James W. Thackeray, Roel Gronheid, Stewart A. Robertson, Trey Graves, and David Blankenship, Proc. SPIE, 7273, 727343 (2009).
6. (a.) "Chemically amplified resists resolving 25 nm 1:1 line: Space features with EUV lithography," James W. Thackeray, Roger A. Nassar, Robert Brainard, Dario Goldfarb, Thomas Wallow, Yayi Wei, Jeff Mackey, Patrick Naulleau, Bill Pierson, and Harun H. Solak, Proc. SPIE, 6517, 651719 (2007).
7. (b) J. W. Thackeray, R. A. Nassar, K. Spear-Alfonso R. Brainard, D. Goldfarb, T. Wallow, Y. Wei, W. Montgomery, K. Petrillo, O. Wood, C. -S Koay, J. Mackey, P. Naulleau, B. Pierson, H. Solak, "Pathway to sub-30 nm Resolution in EUV Lithography, "J. Photopolym. Sci. Technol., 20 (3), pp. 411-418 (2007).
8. "Improved Lithographic Performance for EUV resists based on Polymers with Photoacid Generators in the Backbone," M. Thiyagarajan, K. Dean, K. Gonsalves, J. Photopolym. Sci. Technol., 18(6) pp. 737-741(2005).
9. N. Turro, Modern Molecular Photochemistry, University Science Books, (1991).
10. "On a Heuristic Viewpoint Concerning the Production and Transformation of Light", A. Einstein, Annalen der Physik., 17, 1905.
11. "Parametric modeling of photoelectron effects in xray lithography", Ocola, L. E. J. Vac. Sci. Technol, Bll (1993).
12. "Modeling and simulation of chemically-amplified electron beam, x-ray and EUV resist processes", T. Kozawa J. Vac. Sci. Technol., B22 (6), Nov/Dec 2004.