-
1
-
-
3843133940
-
Contact hole formation by multiple exposure technique in ultra-low k1 lithography
-
H. Nakamura, Y. Onishi, K. Sato, S. Tanaka, S. Mimotogi, K. Hashimoto, and S. Inoue, "Contact hole formation by multiple exposure technique in ultra-low k1 lithography," Proc. SPIE 5377, 225-263 (2004).
-
(2004)
Proc. SPIE 5377
, pp. 225-263
-
-
Nakamura, H.1
Onishi, Y.2
Sato, K.3
Tanaka, S.4
Mimotogi, S.5
Hashimoto, K.6
Inoue, S.7
-
2
-
-
24744436451
-
Contact hole formation by multiple exposure technique in ultra-low k1 lithography
-
H. Nakamura, Y. Onishi, K. Sato, S. Tanaka, S. Mimotogi, K. Hashimoto, and S. Inoue, "Contact hole formation by multiple exposure technique in ultra-low k1 lithography," J. Microlithogr., Microfabr., Microsyst. 4, 023005 (2005).
-
(2005)
J. Microlithogr., Microfabr., Microsyst.
, vol.4
, pp. 023005
-
-
Nakamura, H.1
Onishi, Y.2
Sato, K.3
Tanaka, S.4
Mimotogi, S.5
Hashimoto, K.6
Inoue, S.7
-
3
-
-
24644497116
-
Double exposure for the contact layer of the 65-nm node
-
DOI 10.1117/12.599651, 21, Advances in Resist Technology and Processing XXII
-
D.-C. Owe-Yang, S. Yu, H. Chen, C. Chang, B. Ho, J. Lin, and B. Lin, "Double exposure for the contact layer of the 65-nm node," Proc. SPIE 5753, 171-180 (2005). (Pubitemid 41275558)
-
(2005)
Progress in Biomedical Optics and Imaging - Proceedings of SPIE
, vol.5753
, Issue.1
, pp. 171-180
-
-
Owe-Yang, D.C.1
Yu, S.S.2
Chen, H.3
Chang, C.Y.4
Ho, B.-C.5
Lin, J.C.6
Lin, B.J.7
-
4
-
-
35148897294
-
Ultra-low k1 oxide contact hole formation and metal filling using resist contact hole pattern by double L&S formation method
-
H. Nakamura, M. Omura, S. Yamashita, Y. Taniguchi, J. Abe, S. Tanaka, and S. Inoue, "Ultra-low k1 oxide contact hole formation and metal filling using resist contact hole pattern by double L&S formation method," Proc. SPIE 6250, 65201E1 (2007).
-
(2007)
Proc. SPIE 6250
-
-
Nakamura, H.1
Omura, M.2
Yamashita, S.3
Taniguchi, Y.4
Abe, J.5
Tanaka, S.6
Inoue, S.7
-
5
-
-
35148829943
-
OPC-free on-grid fine random hole pattern formation utilizing double resist patterning with double RETs
-
S. Nakao, S. Maejima, T. Yamamoto, Y. Ono, J. Sakai, A. Yamaguchi, A. Imai, T. Hanawa, and K. Sukoh, "OPC-free on-grid fine random hole pattern formation utilizing double resist patterning with double RETs," Proc. SPIE 6250, 65203W (2007).
-
(2007)
Proc. SPIE 6250
-
-
Nakao, S.1
Maejima, S.2
Yamamoto, T.3
Ono, Y.4
Sakai, J.5
Yamaguchi, A.6
Imai, A.7
Hanawa, T.8
Sukoh, K.9
-
7
-
-
57349165432
-
Ion implantation as insoluble treatment in resist stacking process
-
H. Nakamura, T. Shibata, K. Rikimaru, S. Ito, S. Tanaka, and S. Inoue, "Ion implantation as insoluble treatment in resist stacking process," Proc. SPIE 6923, 692322 (2008).
-
(2008)
Proc. SPIE 6923
, pp. 692322
-
-
Nakamura, H.1
Shibata, T.2
Rikimaru, K.3
Ito, S.4
Tanaka, S.5
Inoue, S.6
-
8
-
-
51549089971
-
Resist freezing process for double-exposure lithography
-
K. Chen, W. Huang, W. Li, and P. Varanasi, "Resist freezing process for double-exposure lithography," Proc. SPIE 6923, 69230G (2008).
-
(2008)
Proc. SPIE 6923
-
-
Chen, K.1
Huang, W.2
Li, W.3
Varanasi, P.4
-
9
-
-
51549115631
-
Sub-40 nm half-pitch double patterning with resist freezing process
-
M. Hori, T. Nagai, A. Nakamura, T. Abe, G. Wakamatsu, T. Kakizawa, Y. Anno, M. Sugiura, S. Kusumoto, Y. Yamaguchi, and T. Shimokawa, "Sub-40 nm half-pitch double patterning with resist freezing process," Proc. SPIE 6923, 69230H (2008).
-
(2008)
Proc. SPIE 6923
-
-
Hori, M.1
Nagai, T.2
Nakamura, A.3
Abe, T.4
Wakamatsu, G.5
Kakizawa, T.6
Anno, Y.7
Sugiura, M.8
Kusumoto, S.9
Yamaguchi, Y.10
Shimokawa, T.11
-
10
-
-
51549096561
-
Impact of HBr and Ar cure plasma treatments on 193 nm photoresists
-
A. Bazin, E. Pargon, X. Mellhaoui, D. Perret, B. Mortini, and O. Joubert, "Impact of HBr and Ar cure plasma treatments on 193 nm photoresists," Proc. SPIE 6923, 692337 (2008).
-
(2008)
Proc. SPIE 6923
, pp. 692337
-
-
Bazin, A.1
Pargon, E.2
Mellhaoui, X.3
Perret, D.4
Mortini, B.5
Joubert, O.6
-
11
-
-
80455177852
-
193-nm negative-tone resist for double imaging
-
presented at Feb. 25, San Jose, CA, SPIE (2008
-
J. Iwashita, K. Sasaki, S. Abe, T. Ando, and T. Awai, 193-nm negative-tone resist for double imaging," presented at SPIE Advanced Lithography 2008, Feb. 25, 2008, San Jose, CA, SPIE (2008).
-
(2008)
SPIE Advanced Lithography 2008
-
-
Iwashita, J.1
Sasaki, K.2
Abe, S.3
Ando, T.4
Awai, T.5
-
12
-
-
57349174494
-
Rigorous physical modeling of a materials-based frequency doubling lithography process
-
S. Robertson, J. Biafore, T. Graves, and M. Smith, "Rigorous physical modeling of a materials-based frequency doubling lithography process," Proc. SPIE 6923, 6923D1 (2008).
-
(2008)
Proc. SPIE 6923
-
-
Robertson, S.1
Biafore, J.2
Graves, T.3
Smith, M.4
-
13
-
-
45449094183
-
Alternative process schemes for double patterning that eliminate the intermediate etch step
-
M. Maenhoudt, R. Gronheid, N. Stepanenko, T. Masuda, and D. Vangoidenshoven, "Alternative process schemes for double patterning that eliminate the intermediate etch step," Proc. SPIE 6924, 69240P (2008).
-
(2008)
Proc. SPIE 6924
-
-
Maenhoudt, M.1
Gronheid, R.2
Stepanenko, N.3
Masuda, T.4
Vangoidenshoven, D.5
-
14
-
-
51549097530
-
A lithographic and process assessment of photoresist stabilization for double-patterning using 172 nm photoresist curing
-
N. Bekiaris, H. Cervera, J. Dai, R. Kim, A. Acheta, T. Wallow, J. Kye, H. J. Levinson, T. Nowak, and J. Yu, "A lithographic and process assessment of photoresist stabilization for double-patterning using 172 nm photoresist curing," Proc. SPIE 6923, 692321 (2008).
-
(2008)
Proc. SPIE 6923
, pp. 692321
-
-
Bekiaris, N.1
Cervera, H.2
Dai, J.3
Kim, R.4
Acheta, A.5
Wallow, T.6
Kye, J.7
Levinson, H.J.8
Nowak, T.9
Yu, J.10
-
15
-
-
45449107193
-
Double printing through the use of ion implantation
-
N. Samarakone, P. Yick, M. Zawadzki, and S. Choi, "Double printing through the use of ion implantation," Proc. SPIE 6924, 69242B (2008).
-
(2008)
Proc. SPIE 6924
-
-
Samarakone, N.1
Yick, P.2
Zawadzki, M.3
Choi, S.4
-
16
-
-
51549099010
-
A study of photoresist pattern freezing for double imaging using 172 nm VUV flood exposure
-
M. Yamaguchi, T. Wallow, Y. Yamada, R. Kim, J. Kye, and H. J. Levinson, "A study of photoresist pattern freezing for double imaging using 172 nm VUV flood exposure," J. Photopolym. Sci. Technol. 21, 697-704 (2008).
-
(2008)
J. Photopolym. Sci. Technol.
, vol.21
, pp. 697-704
-
-
Yamaguchi, M.1
Wallow, T.2
Yamada, Y.3
Kim, R.4
Kye, J.5
Levinson, H.J.6
-
18
-
-
0035519764
-
Characterization and modeling of volumetric and mechanical properties for step and flash imprint lithography photopolymers
-
DOI 10.1116/1.1420199, 45th International COnference on Electron, Ion, and Photon Beam Technology and Nanofabrication
-
M. Colburn, I. Suez, B. Choi, M. Meissi, T. Bailey, S. Sreenivasan, J. Ekerdt, and C. G. Willson, "Characterization and modeling of volu-metric and mechanical properties for step and flash imprint lithography photopolymers," J. Vac. Sci. Technol. B 19(6), 2685-2689 (2001). (Pubitemid 34089806)
-
(2001)
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
, vol.19
, Issue.6
, pp. 2685-2689
-
-
Colburn, M.1
Suez, I.2
Choi, B.J.3
Meissl, M.4
Bailey, T.5
Sreenivasan, S.V.6
Ekerdt, J.G.7
Willson, C.G.8
-
19
-
-
4344634864
-
A two-dimensional model of the deformation of photoresist structures using elastoplastic polymer properties
-
K. Yoshimoto, M. Stoykovich, H. Cao, J. De Pablo, P. Nealey, and W. Drugan, "A two-dimensional model of the deformation of photoresist structures using elastoplastic polymer properties," J. Appl. Phys. 96, 1857-1865 (2004).
-
(2004)
J. Appl. Phys.
, vol.96
, pp. 1857-1865
-
-
Yoshimoto, K.1
Stoykovich, M.2
Cao, H.3
De Pablo, J.4
Nealey, P.5
Drugan, W.6
-
20
-
-
0005807031
-
Sub 50 nm gate patterning using line-trimming with 248 or 193 nm lithography
-
I. Pollentier, P. Jaenen, C. Baerts, and K. Ronse, "Sub 50 nm gate patterning using line-trimming with 248 or 193 nm lithography," Future Fab Int. 12, 161-164 (2002).
-
(2002)
Future Fab Int.
, vol.12
, pp. 161-164
-
-
Pollentier, I.1
Jaenen, P.2
Baerts, C.3
Ronse, K.4
-
21
-
-
0141722783
-
Most feasible curing process for ArF resist in device integration aspect
-
H. Kim, Y. Kang, J. Lee, Y. Chai, S. Woo, H. Cho, and W. Han, "Most feasible curing process for ArF resist in device integration aspect," Proc. SPIE 5039, 817-826 (2003).
-
(2003)
Proc. SPIE 5039
, pp. 817-826
-
-
Kim, H.1
Kang, Y.2
Lee, J.3
Chai, Y.4
Woo, S.5
Cho, H.6
Han, W.7
-
22
-
-
35148891640
-
Characterization of bending CD errors induced by resist trimming in 65 nm node and beyond
-
Y. Gu, J. Friedman, V. Ukraintsev, G. Zhang, T. Wolf, T. Lii, and R. Jackson, "Characterization of bending CD errors induced by resist trimming in 65 nm node and beyond," Proc. SPIE 6518, 651826 (2007).
-
(2007)
Proc. SPIE 6518
, pp. 651826
-
-
Gu, Y.1
Friedman, J.2
Ukraintsev, V.3
Zhang, G.4
Wolf, T.5
Lii, T.6
Jackson, R.7
-
23
-
-
0141618954
-
E-beam curing effects on the etch and CD-SEM stability of 193 nm resists
-
DOI 10.1117/12.474262
-
M. Padmanaban, E. Alemy, R. Dammel, W. Kim, T. Kudo, S. Lee, D. McKenzie, A. Orsi, D. Rahman, W. Chen, R. Sadjadi, W. Livesay, and M. Ross, "E-beam curing effects on the etch and CD-SEM stability of 193 nm resists," Proc. SPIE 4690, 606-614 (2002). (Pubitemid 35250886)
-
(2002)
Proceedings of SPIE - The International Society for Optical Engineering
, vol.4690
, pp. 606-614
-
-
Padmanaban, M.1
Alemy, E.2
Dammel, R.R.3
Kim, W.-K.4
Kudo, T.5
Lee, S.-H.6
McKenzie, D.7
Orsi, A.8
Rahman, D.9
Chen, W.-L.10
Sadjadi, R.M.11
Livesay, W.12
Ross, M.13
-
24
-
-
0037717110
-
Improved simulation method for the calculation of the elastic constants of crystalline and amorphous systems using strain fluctuations
-
K. Van Workum and J. De Pablo, "Improved simulation method for the calculation of the elastic constants of crystalline and amorphous systems using strain fluctuations," Phys. Rev. E 67, 011505 (2003).
-
(2003)
Phys. Rev. E
, vol.67
, pp. 011505
-
-
Van Workum, K.1
De Pablo, J.2
-
25
-
-
19744380961
-
Mechanical heterogeneities in model polymer glasses at small length scales
-
K. Yoshimoto, T. Jain, K. Van Workum, P. Nealey, and J. De Pablo, "Mechanical heterogeneities in model polymer glasses at small length scales," Phys. Rev. Lett. 93, 175501 (2004).
-
(2004)
Phys. Rev. Lett.
, vol.93
, pp. 175501
-
-
Yoshimoto, K.1
Jain, T.2
Van Workum, K.3
Nealey, P.4
De Pablo, J.5
-
26
-
-
20844452947
-
Local dynamic mechanical properties in model free-standing polymer thin films
-
K. Yoshimoto, T. Jain, P. Nealey, and J. De Pablo, "Local dynamic mechanical properties in model free-standing polymer thin films," J. Chem. Phys. 122, 144712 (2005).
-
(2005)
J. Chem. Phys.
, vol.122
, pp. 144712
-
-
Yoshimoto, K.1
Jain, T.2
Nealey, P.3
De Pablo, J.4
-
27
-
-
34047128706
-
Nanopatterning with 248 nm photolithography by photostabilizing bilayer photoresists
-
DOI 10.1116/1.2713404
-
F. Tsai, S. Jhuo, and J. Lee, "Nanopatterning with 248 nm photolithography by photostabilizing bilayer photoresists," J. Vac. Sci. Technol. B 25, 426-429 (2007). (Pubitemid 46517202)
-
(2007)
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
, vol.25
, Issue.2
, pp. 426-429
-
-
Tsai, F.-Y.1
Jhuo, S.-J.2
Lee, J.-T.3
-
28
-
-
0033691970
-
Approach for VUV positive resists using photodecomposable polymers
-
S. Kishimura, A. Katsuyama, and M. Sasago, "Approach for VUV positive resists using photodecomposable polymers," Proc. SPIE 3999, 347-356 (2000).
-
(2000)
Proc. SPIE 3999
, pp. 347-356
-
-
Kishimura, S.1
Katsuyama, A.2
Sasago, M.3
-
29
-
-
0000837945
-
Photochemical reaction of polymers used as resists by 146-nm light exposure
-
S. Kishimura, M. Sasago, M. Shirai, and M. Tsunooka, "Photochemical reaction of polymers used as resists by 146-nm light exposure," J. Photopolym. Sci. Technol. 12, 717-720 (1999).
-
(1999)
J. Photopolym. Sci. Technol.
, vol.12
, pp. 717-720
-
-
Kishimura, S.1
Sasago, M.2
Shirai, M.3
Tsunooka, M.4
-
30
-
-
0034763514
-
Ar ion implantation into resist for etching resistance improvement
-
DOI 10.1117/12.436899
-
A. Yamaguchi, A. Nakae, and K. Tsujita, "Ar ion implantation into resist for etching resistance improvement," Proc. SPIE 4345, 655-664 (2001). (Pubitemid 32993639)
-
(2001)
Proceedings of SPIE - The International Society for Optical Engineering
, vol.4345
, Issue.2
, pp. 655-664
-
-
Yamaguchi, A.1
Nakae, A.2
Tsujita, K.3
-
31
-
-
0002613133
-
-
M. Neisser, T. Kocab, B. Beauchemin, T. Sarubbi, S. Wong, and W. Ng, Proc. Arch. Interface Conf. 2000, 43-50 (2000).
-
(2000)
Proc. Arch. Interface Conf.
, vol.2000
, pp. 43-50
-
-
Neisser, M.1
Kocab, T.2
Beauchemin, B.3
Sarubbi, T.4
Wong, S.5
Ng, W.6
-
32
-
-
0035755027
-
Mechanistic studies on the CD degradation of 193 nm resists during SEM inspection
-
T. Kudo, R. Dammel, J. Bae, D. Rahman, Y. Kim, D. McKenzie, E. Alemy, W. Ng, and M. Padmanaban, "Mechanistic studies on the CD degradation of 193 nm resists during SEM inspection," J. Photopolym. Sci. Technol. 14, 407-417 (2001).
-
(2001)
J. Photopolym. Sci. Technol.
, vol.14
, pp. 407-417
-
-
Kudo, T.1
Dammel, R.2
Bae, J.3
Rahman, D.4
Kim, Y.5
McKenzie, D.6
Alemy, E.7
Ng, W.8
Padmanaban, M.9
-
33
-
-
0034757314
-
Investigation on the mechanism of the 193nm resist linewidth reduction during the SEM measurement
-
DOI 10.1117/12.436848
-
M. Wu, W. Huang, K. Chen, C. Archie, and M. Lagus, "Investigation on the mechanism of the 193 nm resist linewidth reduction during the SEM measurement," Proc. SPIE 4345, 190-199 (2001). (Pubitemid 32993592)
-
(2001)
Proceedings of SPIE - The International Society for Optical Engineering
, vol.4345
, Issue.1
, pp. 190-199
-
-
Wu, C.-H.J.1
Huang, W.-S.2
Chen, K.-J.R.3
Archie, C.N.4
Lagus, M.E.5
-
34
-
-
33947104279
-
Investigation of possible ArF resist slimming mechanisms
-
L. Akerman, G. Eytan, R. Uchida, S. Fujimura, and T. Mimura, "Investigation of possible ArF resist slimming mechanisms," J. Microlithogr., Microfabr., Microsyst. 5, 043005 (2006).
-
(2006)
J. Microlithogr., Microfabr., Microsyst.
, vol.5
, pp. 043005
-
-
Akerman, L.1
Eytan, G.2
Uchida, R.3
Fujimura, S.4
Mimura, T.5
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