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Volumn 7972, Issue , 2011, Pages

Materials challenges for sub-20nm lithography

Author keywords

Chemical amplification; Diffusion; EUV; Polymer bound PAG; Resists

Indexed keywords

ACID DIFFUSION; ACID GENERATION; CHEMICAL AMPLIFICATION; CHEMICALLY AMPLIFIED RESIST; CONTINUOUS IMPROVEMENTS; EUV; HIGH RESOLUTION RESISTS; NOISE PROBLEMS; PATTERN COLLAPSE; POLYMER-BOUND PAG; RESIST MATERIALS; RESIST SYSTEMS; RESISTS;

EID: 79955887078     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.882958     Document Type: Conference Paper
Times cited : (10)

References (49)
  • 1
    • 0005084856 scopus 로고
    • Acid-catalyzed single-layer resists for ArF lithography
    • (a.) Roderick R. Kunz, Robert D. Allen, William D. Hinsberg, and Gregory M. Wallraff "Acid-catalyzed single-layer resists for ArF lithography," Opt. Eng. 32, 2363 (1993);
    • (1993) Opt. Eng. , vol.32 , pp. 2363
    • Kunz, R.R.1    Allen, R.D.2    Hinsberg, W.D.3    Wallraff, G.M.4
  • 3
    • 65849353541 scopus 로고    scopus 로고
    • Development of materials and processes for negative tone development toward 32-nm node 193-nm immersion double-patterning process
    • (a.) Shinji Tarutani, Tsubaki Hideaki, and Sou Kamimura, "Development of materials and processes for negative tone development toward 32-nm node 193-nm immersion double-patterning process," Proc. SPIE 7273, 72730C (2009);
    • (2009) Proc. SPIE , vol.7273
    • Tarutani, S.1    Hideaki, T.2    Kamimura, S.3
  • 4
    • 77957089560 scopus 로고    scopus 로고
    • Sub 30nm node contact hole patterning using immersion single exposure with negative tone development
    • (b.) Seokho Kang, Michael Reilly, Thomas Penniman, Rosemary Bell, Ken Spizuoco, Lori Joesten and Young C. Bae. "Sub 30nm Node Contact Hole Patterning Using Immersion Single Exposure with Negative Tone Development," J. Photopoly. Sci. Tech (23) 2 pp211-216 (2010).
    • (2010) J. Photopoly. Sci. Tech , vol.2 , Issue.23 , pp. 211-216
    • Kang, S.1    Reilly, M.2    Penniman, T.3    Bell, R.4    Spizuoco, K.5    Joesten, L.6    Bae, Y.C.7
  • 7
    • 33745629472 scopus 로고    scopus 로고
    • Improved lithographic performance for EUV resists based on polymers with photoacid generators in the backbone
    • (d.) M. Thiyagarajan, K. Dean, K. Gonsalves, "Improved Lithographic Performance for EUV resists based on Polymers with Photoacid Generators in the Backbone," J. Photopolym. Sci Tech. 18(6) pp. 737-741 (2005).
    • (2005) J. Photopolym. Sci Tech. , vol.18 , Issue.6 , pp. 737-741
    • Thiyagarajan, M.1    Dean, K.2    Gonsalves, K.3
  • 8
    • 0033717848 scopus 로고    scopus 로고
    • Chemically amplified resists for electron-beam projection lithography mask fabrication
    • (a.) Christopher Magg and Michael J. Lercel "Chemically amplified resists for electron-beam projection lithography mask fabrication," Proc. SPIE 3997, 276 (2000);
    • (2000) Proc. SPIE , vol.3997 , pp. 276
    • Magg, C.1    Lercel, M.J.2
  • 9
    • 0030313096 scopus 로고    scopus 로고
    • Development of two new positive DUV photoresists for use with direct-write e-beam lithography
    • (b.) David P. Mancini, Douglas J. Resnick, Kevin J. Nordquist, William J. Dauksher, James W. Thackeray, and Mark A. McCord "Development of two new positive DUV photoresists for use with direct-write e-beam lithography," Proc. SPIE 2723, 112 (1996).
    • (1996) Proc. SPIE , vol.2723 , pp. 112
    • Mancini, D.P.1    Resnick, D.J.2    Nordquist, K.J.3    Dauksher, W.J.4    Thackeray, J.W.5    McCord, M.A.6
  • 10
    • 77953311301 scopus 로고    scopus 로고
    • Directed assembly of block copolymers on lithographically defined surfaces
    • (a.) Gordon S. W. Craig and Paul F. Nealey "Directed assembly of block copolymers on lithographically defined surfaces," Proc. SPIE 7637, 76370L (2010)
    • (2010) Proc. SPIE , vol.7637
    • Craig Gordon, S.W.1    Nealey, P.F.2
  • 11
    • 77953307294 scopus 로고    scopus 로고
    • Self-assembling materials for lithographic patterning: Overview, status, and moving forward
    • (b.) William Hinsberg, Joy Cheng, Ho-Cheol Kim, and Daniel P. Sanders "Self-assembling materials for lithographic patterning: overview, status, and moving forward," Proc. SPIE 7637, 76370G (2010).
    • (2010) Proc. SPIE , vol.7637
    • Hinsberg, W.1    Cheng, J.2    Kim, H.-C.3    Sanders, D.P.4
  • 12
    • 33745610764 scopus 로고    scopus 로고
    • Marching to the beat of moore's law
    • Yan Borodovsky "Marching to the beat of Moore's Law," Proc. SPIE 6153, 615301 (2006).
    • (2006) Proc. SPIE , vol.6153 , pp. 615301
    • Borodovsky, Y.1
  • 14
    • 0348184094 scopus 로고
    • Molecular bases for the interaction between novolaks and diazonaphthoquinone photoactive compounds
    • Marie Borzo, Joseph J. Rafalko, and Ralph R. Dammel "Molecular bases for the interaction between novolaks and diazonaphthoquinone photoactive compounds," Proc. SPIE 2195, 673 (1994).
    • (1994) Proc. SPIE , vol.2195 , pp. 673
    • Borzo, M.1    Rafalko, J.J.2    Dammel, R.R.3
  • 15
    • 79955923423 scopus 로고
    • Highly regioselective PACs for i-line resist design: Synthetic reaction model, dissolution kinetics and lithographic response
    • Ashish Pandya, Peter Trefonas III, Anthony Zampini, and Pamela Turci, "Highly regioselective PACs for i-line resist design: synthetic reaction model, dissolution kinetics and lithographic response," Proc. SPIE 2195, 559 (1994)
    • (1994) Proc. SPIE , vol.2195 , pp. 559
    • Pandya, A.1    Trefonas III, P.2    Zampini, A.3    Turci, P.4
  • 16
    • 79955906380 scopus 로고
    • Optimization of the absorbance of novolak resin films at 248 nm
    • (a.) Leonard E. Bogan, Jr. and Karen A. Grazian, "Optimization of the absorbance of novolak resin films at 248 nm," Proc. SPIE 1262, 180 (1990);
    • (1990) Proc. SPIE , vol.1262 , pp. 180
    • Bogan Jr., L.E.1    Grazian, K.A.2
  • 17
    • 0032670585 scopus 로고    scopus 로고
    • Chemically amplified resists: Past, present, and future
    • (b.) Hiroshi Ito "Chemically amplified resists: past, present, and future," Proc. SPIE 3678, 2 (1999).
    • (1999) Proc. SPIE , vol.3678 , pp. 2
    • Ito, H.1
  • 18
    • 0000538737 scopus 로고
    • Environmentally stable chemical amplification positive resist: Principle, chemistry, contamination resistance, and lithographic feasibility
    • (a.) H. Ito, G. Breyta, D. Hofer, R. Sooriyakumaran, K. Petrillo, D. Seeger, "Environmentally Stable Chemical Amplification Positive Resist: Principle, Chemistry, Contamination Resistance, and Lithographic Feasibility," J. Photopolym. Sci. Technol., 7, 433-448 (1994).;
    • (1994) J. Photopolym. Sci. Technol. , vol.7 , pp. 433-448
    • Ito, H.1    Breyta, G.2    Hofer, D.3    Sooriyakumaran, R.4    Petrillo, K.5    Seeger, D.6
  • 21
    • 57349152439 scopus 로고    scopus 로고
    • Rise of chemical amplification resists from laboratory curiosity to paradigm enabling moore's law
    • Hiroshi Ito, "Rise of chemical amplification resists from laboratory curiosity to paradigm enabling Moore's law," Proc. SPIE 6923, 692302 (2008).
    • (2008) Proc. SPIE , vol.6923 , pp. 692302
    • Ito, H.1
  • 22
    • 0026438635 scopus 로고
    • Alicyclic polymer for ArF and KrF excimer resist based on chemical amplification
    • Yuko Kaimoto, Koji Nozaki, Satoshi Takechi, and Naomichi Abe "Alicyclic polymer for ArF and KrF excimer resist based on chemical amplification," Proc. SPIE 1672, 66 (1992).
    • (1992) Proc. SPIE , vol.1672 , pp. 66
    • Kaimoto, Y.1    Nozaki, K.2    Takechi, S.3    Abe, N.4
  • 23
    • 62649143646 scopus 로고    scopus 로고
    • Double-patterning decomposition, design compliance, and verification algorithms at 32nm hp
    • Alexander Tritchkov, Petr Glotov, Sergiy Komirenko, Emile Sahouria, Andres Torres, Ahmed Seoud, and Vincent Wiaux, "Double-patterning decomposition, design compliance, and verification algorithms at 32nm hp," Proc. SPIE 7122, 71220S (2008).
    • (2008) Proc. SPIE , vol.7122
    • Tritchkov, A.1    Glotov, P.2    Komirenko, S.3    Sahouria, E.4    Torres, A.5    Seoud, A.6    Wiaux, V.7
  • 24
    • 77953530307 scopus 로고    scopus 로고
    • Extreme ultraviolet lithography's path to manufacturing
    • Harry J. Levinson, "Extreme ultraviolet lithography's path to manufacturing," J. Micro/Nanolith. MEMS MOEMS 8, 041501 (2009).
    • (2009) J. Micro/Nanolith. MEMS MOEMS , vol.8 , pp. 041501
    • Levinson, H.J.1
  • 27
    • 77953524463 scopus 로고    scopus 로고
    • Study on acid diffusion length effect with PAG-blended system and anion-bounded polymer system
    • (b.) Shinji Tarutani, Hideaki Tsubaki, Hidenori Takahashi, Takayuki Itou, Kentaro Matsunaga, Gousuke Shiraishi, and Toshiro Itani "Study on acid diffusion length effect with PAG-blended system and anion-bounded polymer system," Proc. SPIE 7639, 76391O (2010).
    • (2010) Proc. SPIE , vol.7639
    • Tarutani, S.1    Tsubaki, H.2    Takahashi, H.3    Itou, T.4    Matsunaga, K.5    Shiraishi, G.6    Itani, T.7
  • 29
    • 77954019070 scopus 로고    scopus 로고
    • Radiation chemistry in chemically amplified resists
    • 030001
    • T. Kozawa, S. Tagawa, "Radiation Chemistry in Chemically Amplified Resists," JJAP(49) 030001, pp. 1-19 (2010).
    • (2010) JJAP , Issue.49 , pp. 1-19
    • Kozawa, T.1    Tagawa, S.2
  • 30
    • 0141722617 scopus 로고    scopus 로고
    • Novel silicon-containing polymers as photoresist materials for EUV lithography
    • (a.) Y.-J. Kwark, J. P. Bravo-Vasquez, C. K. Ober, H. B. Cao, H. Deng, R. Meagley, "Novel Silicon-containing Polymers as Photoresist Materials for EUV Lithography," Proc. SPIE, 5039, pp. 1204-1211 (2003);
    • (2003) Proc. SPIE , vol.5039 , pp. 1204-1211
    • Kwark, Y.-J.1    Bravo-Vasquez, J.P.2    Ober, C.K.3    Cao, H.B.4    Deng, H.5    Meagley, R.6
  • 34
    • 3843112153 scopus 로고    scopus 로고
    • The lithographic impact of resist model parameters
    • (b) Mark D. Smith, Jeffrey D. Byers, C. A. Mack, "The lithographic impact of resist model parameters," Proc. SPIE, 5376, pp. 322-332 (2004).
    • (2004) Proc. SPIE , vol.5376 , pp. 322-332
    • Smith, M.D.1    Byers, J.D.2    Mack, C.A.3
  • 35
    • 0141500074 scopus 로고    scopus 로고
    • Extendability of chemically amplified resists: Another brick wall?
    • (a) W. Hinsberg et al, "Extendability of Chemically Amplified Resists: Another Brick Wall?", Proc. SPIE, 5039, pp.1 - 14 (2003);
    • (2003) Proc. SPIE , vol.5039 , pp. 1-14
    • Hinsberg, W.1
  • 36
    • 0035463766 scopus 로고    scopus 로고
    • Chemical and physical aspects of the post exposure baking process used for positive chemically amplified resists
    • (b) W. Hinsberg et al, "Chemical and Physical aspects of the Post exposure baking process used for positive chemically amplified resists,", IBM J. of Research and Development, v.45, no.5, pp 1-14 (2001).
    • (2001) IBM J. of Research and Development , vol.45 , Issue.5 , pp. 1-14
    • Hinsberg, W.1
  • 37
    • 70249124229 scopus 로고    scopus 로고
    • Investigation of polymer-bound PAGs: Synthesis,Characterization and initial structure/property relationships of anion-bound resists
    • Robert D. Allen, Phillip J. Brock, Young-Hye Na, Mark H. Sherwood, Hoa D. Truong, Gregory M. Wallraff, Masaki Fujiwara and Kazuhiko Maeda, "Investigation of Polymer-bound PAGs: Synthesis, Characterization and Initial Structure/Property Relationships of Anion-bound Resists," J. Photopol. Sci. Tech., v.22(1) pp. 25-31 (2009).
    • (2009) J. Photopol. Sci. Tech. , vol.22 , Issue.1 , pp. 25-31
    • Allen, R.D.1    Brock, P.J.2    Na, Y.-H.3    Sherwood, M.H.4    Truong, H.D.5    Wallraff, G.M.6    Fujiwara, M.7    Maeda, K.8
  • 39
    • 77957161849 scopus 로고    scopus 로고
    • Understanding the role of acid vs. Electron blur in EUV resist materials
    • James W. Thackeray, Mike Wagner, Su Jim Hang and John Biafore "Understanding the Role of Acid vs. Electron Blur in EUV Resist Materials," J. Photopol. Sci. Tech v23(5) pp. 631-638 (2010).
    • (2010) J. Photopol. Sci. Tech , vol.23 , Issue.5 , pp. 631-638
    • Thackeray, J.W.1    Wagner, M.2    Hang, S.J.3    Biafore, J.4
  • 40
    • 70349935008 scopus 로고    scopus 로고
    • Estimating the out-of-band radiation flare levels for extreme ultraviolet lithography
    • (a.) Simi A. George, Patrick P. Naulleau, Senajith Rekawa, Eric Gullikson, and Charles Drew Kemp, "Estimating the out-of-band radiation flare levels for extreme ultraviolet lithography," J. Micro/Nanolith. MEMS MOEMS 8, 041502 (2009);
    • (2009) J. Micro/Nanolith. MEMS MOEMS , vol.8 , pp. 041502
    • George, S.A.1    Naulleau, P.P.2    Rekawa, S.3    Gullikson, E.4    Kemp, C.D.5
  • 41
    • 70349923607 scopus 로고    scopus 로고
    • Flare in extreme ultraviolet lithography: Metrology, out-of-band radiation, fractal point-spread function, and flare map calibration
    • (b.) Gian F. Lorusso, Frieda Van Roey, Eric Hendrickx, Germain Fenger, Michael Lam, Christian Zuniga, Mohamed Habib, Hesham Diab, and James Word "Flare in extreme ultraviolet lithography: metrology, out-of-band radiation, fractal point-spread function, and flare map calibration," J. Micro/Nanolith. MEMS MOEMS 8, 041505 (2009).
    • (2009) J. Micro/Nanolith. MEMS MOEMS , vol.8 , pp. 041505
    • Lorusso, G.F.1    Roey, F.V.2    Hendrickx, E.3    Fenger, G.4    Lam, M.5    Zuniga, C.6    Habib, M.7    Diab, H.8    Word, J.9
  • 43
    • 77953378369 scopus 로고    scopus 로고
    • Characterization of EUV optics contamination due to photoresist related outgassing
    • I. Pollentier, A.-M. Goethals, R. Gronheid, J. Steinhoff, and J. Van Dijk, "Characterization of EUV optics contamination due to photoresist related outgassing," Proc. SPIE 7636, 76361W (2010).
    • (2010) Proc. SPIE , vol.7636
    • Pollentier, I.1    Goethals, A.-M.2    Gronheid, R.3    Steinhoff, J.4    Van Dijk, J.5
  • 46
    • 0040114843 scopus 로고    scopus 로고
    • Nanolithography using extreme ultraviolet lithography interferometry: 19 nm lines and spaces
    • H. H. Solak, D. He, W. Li, and F. Cerrina, "Nanolithography using extreme ultraviolet lithography interferometry: 19 nm lines and spaces," J. Vac. Sci. Technol. B 17(6), 3052-3057 (1999).
    • (1999) J. Vac. Sci. Technol. B , vol.17 , Issue.6 , pp. 3052-3057
    • Solak, H.H.1    He, D.2    Li, W.3    Cerrina, F.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.