Atomic structure of Si(001)-c(4 × 4) formed by heating processes after wet cleaning and its first-principles study

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 7 B, 2003, Pages 4646-4649

  Endo, Katsuyoshi ^a   Ono, Tomoya ^a   Arima, Kenta ^a   Uesugi, Yuji ^a   Kirose, Kikuji ^a   Mori, Yuzo ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

c(4 4) surface reconstruction; First principles simulation; Heating process; LEED; Si(001); STM; Wet cleaning

Indexed keywords

CLEANING; COMPUTER SIMULATION; CONTAMINATION; CRYSTAL ATOMIC STRUCTURE; DESORPTION; HEATING; HYDROGEN; LOW ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SURFACE TREATMENT; WETTING;

ATOMIC STRUCTURE; FIRST PRINCIPLES SIMULATION; HEATING PROCESSES; SUBSEQUENT FLASHING; THERMAL DESORPTION SPECTROSCOPY; WET CLEANING;

SEMICONDUCTING SILICON;

EID: 0141540523     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.4646     Document Type: Article

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