Reconstructions of GaN and InGaN surfaces

Applied Surface Science

Volumn 166, Issue 1, 2000, Pages 165-172

  Feenstra, R M ^a   Chen, Huajie ^a   Ramachandran, V ^a   Smith, A R ^b   Greve, D W ^c  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b OHIO UNIVERSITY   (United States)

^c CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODEPOSITION; INTERFACES (MATERIALS); LOW ENERGY ELECTRON DIFFRACTION; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

SURFACE GROWTH-RECONSTRUCTION KINETICS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034300286     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00401-3     Document Type: Article

References (23)

1. Smith A.R., Feenstra R.M., Greve D.W., Shin M.-S., Skowronski M., Neugebauer J., Northrup J. Appl. Phys. Lett. 72:1998;2114.
2. Packard W.E., Dow J.D., Nicolaides R., Doverspike K., Kaplan R. Superlattices Microstruct. 20:1996;145.
3. Packard W.E., Dow J.D., Nicolaides R., Doverspike K., Kaplan R. J. Mater. Res. 12:1997;646.
4. Smith A.R., Feenstra R.M., Greve D.W., Neugebauer J., Northrup J.E. Phys. Rev. Lett. 79:1997;3934.
5. Smith A.R., Feenstra R.M., Greve D.W., Shin M.S., Skowronski M., Neugebauer J., Northrup J. J. Vac. Sci. Technol., B. 16:1998;2242.
6. Smith A.R., Feenstra R.M., Greve D.W., Shin M.S., Skowronski M., Neugebauer J., Northrup J. Surf. Sci. 423:1999;70.
7. Held R., Crawford D.E., Johnson A.M., Dabiran A.M., Cohen P.I. J. Electron. Mater. 26:1997;272.
8. Held R.A., Nowak G., Ishaug B.E., Seutter S.M., Parkhomovsky A., Dabiran A.M., Cohen P.I., Grzegory I., Porowski S. J. Appl. Phys. 85:1999;7697.
9. Chao Y.-C., Stagarescu C.B., Downes J.E., Ryan P., Smith K.E., Hanser D., Bremser M.D., Davis R.F. Phys. Rev. B. 59:1999;R15586.
10. Bermudez V.M., Koleske D.D., Wickenden A.E. Appl. Surf. Sci. 126:1998;69.
11. Smith A.R., Feenstra R.M., Greve D.W., Neugebauer J., Northrup J. Appl. Phys. A. 66:1998;S947.
12. Ramachandran V., Lee C.D., Feenstra R.M., Smith A.R., Greve D.W. Comment on "Q.K. Xue, Q.Z. Xue, R.Z. Bakhtizin, Y. Hasegawa, I.S.T. Tsong, T. Sakurai, T. Ohno, Phys. Rev. Lett. 82 (1999) 3074" Phys. Rev. Lett. 84:2000;4014.
13. Ramachandran V., Lee C.D., Feenstra R.M., Smith A.R., Northrup J.E., Greve D.W. J. Cryst. Growth. 209:2000;355.
14. Ramachandran V., Brady M.F., Smith A.R., Feenstra R.M., Greve D.W. J. Electron. Mater. 27:1998;308.
15. Cherns D., Young W.T., Steeds J.W., Ponce F.A., Nakamura S. J. Cryst. Growth. 178:1997;201.
16. Smith A.R., Ramachandran V., Feenstra R.M., Greve D.W., Shin M.S., Skowronski M., Neugebauer J., Northrup J. J. Vac. Sci. Technol., A. 16:1998;1641.
17. Hansen P.J., Strausser Y.E., Erikson A.N., Tarsa E.J., Kozodoy P., Brazel E.G., Ibbetson J.P., Mishra U., Narayanamurti V., DenBaars S.P., Speck J.S. Appl. Phys. Lett. 72:1998;2247.
18. Tarsa E.J., Heying B., Wu X.H., Fini P., DenBaars S.P., Speck J.S. J. Appl. Phys. 82:1997;5472.
19. Smith A.R., Ramachandran V., Feenstra R.M., Greve D.W., Ptak A., Myers T.H., Sarney W.L., Salamanca-Riba L., Shin M.-S., Skowronski M. MRS Internet J. Nitride Semicond. Res. 3:1998;12.
20. Zywietz T., Neugebauer J., Scheffler M. Appl. Phys. Lett. 73:1998;487.
21. Chen H., Smith A.R., Feenstra R.M., Greve D.W., Northrup J.E. MRS Internet J. Nitride Semicond. Res. 4S1:1999;G9.5.
22. T. Zywietz, PhD Thesis, Technical University of Berlin, 1999.
23. Widmann F., Daudin B., Feuillet G., Pelekanos N., Rouvière J.L. Appl. Phys. Lett. 73:1998;2642.