Origins of GaN(0 0 0 1) surface reconstructions

Surface Science

Volumn 541, Issue 1-3, 2003, Pages 242-251

  Vezian S ^a   Semond, F ^a   Massies, J ^a   Bullock, D W ^b   Ding, Z ^b   Thibado, P M ^b  

^a CNRS   (France)

^b UNIVERSITY OF ARKANSAS   (United States)

Author keywords

Gallium nitride; Molecular beam epitaxy; Reflection high energy electron diffraction (RHEED); Scanning tunneling microscopy; Surface relaxation and reconstruction

Indexed keywords

GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY;

SURFACE RECONSTRUCTIONS;

SURFACE STRUCTURE;

EID: 0042021717     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00950-6     Document Type: Article

References (29)

1. Nakamura S. Science. 281:1998;956.
2. Ponce F.A., Bour D.P. Nature. 386:1997;351.
3. Ambacher O. J. Phys. D. 31:1998;2653.
4. Smith A.R., Feenstra R.M., Greve D.W., Shin M.-S., Skowronski M., Neugebauer J., Northrup J.E. Appl. Phys. Lett. 72:1998;2114.
5. Smith A.R., Feenstra R.M., Greve D.W., Shin M.-S., Skowronski M., Neugebauer J., Northrup J.E. J. Vac. Sci. Technol. B. 16:1998;2242.
6. Smith A.R., Feenstra R.M., Greve D.W., Neugebauer J., Northrup J.E. Phys. Rev. Lett. 79:1997;3934.
7. Smith A.R., Feenstra R.M., Greve D.W., Shin M.-S., Skowronski M., Neugebauer J., Northrup J.E. Surf. Sci. 423:1999;70.
8. Ramachandran V., Lee C.D., Feenstra R.M., Smith A.R., Northrup J.E., Greve D.W. J. Crystal Growth. 209:2000;355.
9. Xue Q.Z., Xue Q.K., Bakhtizin R.Z., Hasegawa Y., Tsong I.S.T., Sakurai T., Ohno T. Phys. Rev. B. 59:1999;12604.
10. Xue Q.K., Xue Q.Z., Bakhtizin R.Z., Hasegawa Y., Tsong I.S.T., Sakurai T., Ohno T. Phys. Rev. Lett. 82:1999;3074.
11. Ramachandran V., Lee C.D., Feenstra R.M., Smith A.R., Greve D.W. Phys. Rev. Lett. 84:2000;4014.
12. Xue Q.K., Xue Q.Z., Kuwano S., Nakayama K., Sakurai T., Tsong I.S.T., Qiu X.G., Segawa Y. J. Crystal Growth. 229:2001;41.
13. Xue Q.K., Xue Q.Z., Kuwano S., Sakurai T., Ohno T., Tsong I.S.T., Qiu X.G., Segawa Y. Thin Solid Films. 367:2000;149.
14. Grandjean N., Massies J., Vennéguès P., Leroux M., Demangeot F., Renucci M., Frandon J. J. Appl. Phys. 83:1998;1379.
15. Grandjean N., Massies J. Manasreh M.O., Ferguson I.T. III-Nitride Semiconductors: Growth. Optoelectronic Properties of Semiconductors and Superlattices. vol. 19:2003;Taylor and Francis, New York.
16. Tarsa E.J., Heying B., Wu X.H., Fini P., DenBaars S.P., Speck J.S. J. Appl. Phys. 82:1997;5472.
17. S. Vézian, PhD Thesis, Université de Nice Sophia Antipolis, October 2000.
18. Semond F., Cordier Y., Grandjean N., Natali F., Damilano B., Vézian S., Massies J. Phys. Stat. Sol. (a). 188:2002;501.
19. Grandjean N., Leroux M., Massies J., Mesrine M., Laügt M. Jpn. J. Appl. Phys. 38:1999;618.
20. Mesrine M., Grandjean N., Massies J. Appl. Phys. Lett. 72:1998;350.
21. Vézian S., Massies J., Semond F., Grandjean N. Phys. Rev. B. 61:2000;7618.
22. Vézian S., Massies J., Semond F., Grandjean N. Mater. Sci. Eng. B. 82:2001;56.
23. Kästner M., Däweritz L., Ploog K.H. Surf. Sci. 511:2002;323.
24. Dulub O., Boatner L.A., Diebold U. Surf. Sci. 519:2002;201.
25. Wolf D.A., Westwood D.I., Williams R.H. Appl. Phys. Lett. 62:1993;1370.
26. Farrell H.H., Lu J., Schultz B.D., Denison A.B., Palmstrom C.J. J. Vac. Sci. Technol. B. 19:2001;1597.
27. Zhao Y., Deng F., Lau S.S., Tu C.W. J. Vac. Sci. Technol. B. 16:1998;1297.
28. Okumura H., Hamaguchi H., Feuillet G., Ishida Y., Yoshida S. Appl. Phys. Lett. 72:1998;3056.
29. Karpov S.Yu., Talalaev R.A., Makarov Yu.N., Grandjean N., Massies J., Damilano B. Surf. Sci. 450:2000;191.