High reliability GaN-based light-emitting diodes with photo-enhanced wet etching

Solid-State Electronics

Volumn 48, Issue 7, 2004, Pages 1239-1242

  Chen, Lung Chien ^a   Huang, Yin Lin ^a  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

GaN; Light emitting diode; Photo enhanced wet etching; Reliability

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; DISLOCATIONS (CRYSTALS); ELECTRIC SPACE CHARGE; ETCHING; LEAKAGE CURRENTS; LIGHT EMITTING DIODES; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION;

PARAMETER ANALYZERS; PHOTO-ENHANCED CHEMICAL (PEC) ETCHING;

GALLIUM NITRIDE;

EID: 1842843653     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.02.003     Document Type: Article

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