Effects of KOH etching on the properties of Ga-polar n-GaN surfaces

Philosophical Magazine

Volumn 86, Issue 16, 2006, Pages 2315-2327

  Moldovan, G ^a,b   Roe, M J ^a   Harrison, I ^a   Kappers, M ^b   Humphreys, C J ^b   Brown, P D ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON DIFFRACTION; ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; POTASSIUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON BARRIER HEIGHT; ENERGY-ELECTRON DIFFRACTION; KOH TREATMENT; NON-RADIATIVE RECOMBINATION;

GALLIUM NITRIDE;

EID: 33646500611     PISSN: 14786435     EISSN: 14786443     Source Type: Journal    
DOI: 10.1080/14786430500522628     Document Type: Article

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