Sputtering yield as a function of incident ion energy and angle in wurtzite-type GaN crystal

Japanese Journal of Applied Physics

Volumn 47, Issue 3 PART 1, 2008, Pages 1536-1540

  Harafuji, Kenji ^a   Kawamura, Katsuyuki ^b  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaN; Interatomic potential; Molecular dynamics; Simulation; Sputtering

Indexed keywords

ATOMIC PHYSICS; DYNAMICS; GALLIUM ALLOYS; GALLIUM NITRIDE; IONS; MOLECULAR DYNAMICS; POWDERS; QUANTUM CHEMISTRY; SEMICONDUCTING GALLIUM; SPUTTERING; ZINC SULFIDE;

AB INITIO; CASCADE MECHANISMS; CRYSTAL ATOMS; GAN; GAN CRYSTALS; HOT SPOTS; IMPACT REGIONS; INCIDENT IONS; INTERATOMIC POTENTIAL; MOLECULAR DYNAMICS SIMULATIONS; NITROGEN ATOMS; PERIODIC; PHYSICAL SPUTTERING; POTENTIAL PARAMETERS; SIMULATION; SPUTTERING YIELDS; THRESHOLD ENERGIES; UNIT CELLS; WURTZITE;

ATOMS;

EID: 54249142346     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.1536     Document Type: Article

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