Ga-metal inclusions in GaN grown on sapphire

Journal of Crystal Growth

Volumn 203, Issue 3, 1999, Pages 349-354

  Blant, A V ^a   Novikov, S V ^b   Cheng, T S ^a   Flannery, L B ^a   Harrison, I ^a   Campion, R P ^a   Korakakis, D ^a   Larkins, E C ^a   Kribes, Y ^a   Foxon, C T ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DROP FORMATION; GALLIUM COMPOUNDS; INCLUSIONS; SAPPHIRE; SUBSTRATES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM NITRIDE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

MOLECULAR BEAM EPITAXY;

EID: 0032673764     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00045-7     Document Type: Article

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