GaP (1̄ 1̄ 1̄) reconstructed surface studied with STM and LEED

Surface Science

Volumn 525, Issue 1-3, 2003, Pages 57-65

  Hattori, K ^a   Ishihara, K ^a   Miyatake, Y ^a   Matsui, F ^a   Takeda, S ^a   Daimon, H ^a   Komori, F ^b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Gallium phosphide; Low energy electron diffraction (LEED); Scanning tunneling microscopy; Surface relaxation and reconstruction; Surface structure, morphology, roughness, and topography

Indexed keywords

LOW ENERGY ELECTRON DIFFRACTION; MATRIX ALGEBRA; MORPHOLOGY; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SURFACE ROUGHNESS;

DRIFT COMPENSATION;

GALLIUM COMPOUNDS;

EID: 0037429150     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)02564-5     Document Type: Article

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