HREELS of H/GaN(0001): evidence for Ga termination

Surface Science

Volumn 430, Issue 1, 1999, Pages 80-88

  Bellitto, V J ^a   Thoms, B D ^a   Koleske, D D ^b   Wickenden, A E ^b   Henry, R L ^b  

^a GEORGIA STATE UNIVERSITY   (United States)

^b Lab for Advanced Material Synthesis   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ANNEALING; AUGER ELECTRON SPECTROSCOPY; CHEMICAL REACTIONS; DEUTERIUM; ELECTRON ENERGY LOSS SPECTROSCOPY; HYDROGEN; LOW ENERGY ELECTRON DIFFRACTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR VIBRATIONS; PHONONS; SURFACES;

FACETTING; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY; STRETCHING VIBRATION; TERMINATION;

GALLIUM COMPOUNDS;

EID: 0032628951     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00403-3     Document Type: Article

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