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Volumn 11, Issue 41, 1999, Pages 8035-8048

Reactivity and morphology of (1012)-faceted and (3 × 3)-reconstructed GaN(0001) epilayers grown on sapphire(0001)

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Indexed keywords


EID: 0001291834     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/11/41/307     Document Type: Article
Times cited : (14)

References (47)
  • 47
    • 84912605555 scopus 로고
    • Frankel D J et al 1985 J. Vac. Sci. Technol. B 3 1093 report a Ga-H stretching frequency on GaAs(111) (Ga face) of between 224 and 234 meV depending on hydrogen exposure.
    • (1985) J. Vac. Sci. Technol. B , vol.3 , pp. 1093
    • Frankel, D.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.