-
2
-
-
0029389357
-
-
Nakamura S, Senoh M, Iwasa N, Nagahama S, Yamada T and Mukai T 1995 Japan. J. Appl. Phys. 2 34 L1332
-
(1995)
Japan. J. Appl. Phys. 2
, vol.34
-
-
Nakamura, S.1
Senoh, M.2
Iwasa, N.3
Nagahama, S.4
Yamada, T.5
Mukai, T.6
-
3
-
-
0029779805
-
-
Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushida T, Kiyuki H, Sugimoto Y 1996 Japan. J. Appl. Phys. 35 L74
-
(1996)
Japan. J. Appl. Phys.
, vol.35
-
-
Nakamura, S.1
Senoh, M.2
Nagahama, S.3
Iwasa, N.4
Yamada, T.5
Matsushida, T.6
Kiyuki, H.7
Sugimoto, Y.8
-
4
-
-
0030574949
-
-
Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushida T, Kiyuki H and Sugimoto Y 1996 Appl. Phys. Lett. 68 2105
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 2105
-
-
Nakamura, S.1
Senoh, M.2
Nagahama, S.3
Iwasa, N.4
Yamada, T.5
Matsushida, T.6
Kiyuki, H.7
Sugimoto, Y.8
-
6
-
-
21544457041
-
-
Imari S B, Rowland L B, Kruppa W, Kelna G, Doverspike K and Gatskill D K 1994 Electron. Lett. 30 1248
-
(1994)
Electron. Lett.
, vol.30
, pp. 1248
-
-
Imari, S.B.1
Rowland, L.B.2
Kruppa, W.3
Kelna, G.4
Doverspike, K.5
Gatskill, D.K.6
-
7
-
-
0000330622
-
-
Wu C I, Kahn A, Taskar N, Dorman D and Gallagher D 1998 J. Appl. Phys. 83 4249
-
(1998)
J. Appl. Phys.
, vol.83
, pp. 4249
-
-
Wu, C.I.1
Kahn, A.2
Taskar, N.3
Dorman, D.4
Gallagher, D.5
-
9
-
-
0000688384
-
-
Dhesi S S, Stagarescu C B, Smith K E, Doppalapudi D, Singh R and Moustakas T D 1997 Phys. Rev. B 56 10 271
-
(1997)
Phys. Rev. B
, vol.56
, pp. 10271
-
-
Dhesi, S.S.1
Stagarescu, C.B.2
Smith, K.E.3
Doppalapudi, D.4
Singh, R.5
Moustakas, T.D.6
-
11
-
-
0001712691
-
-
Ponce F A, Bour D P, Young W T, Saunders M and Steeds J W 1996 Appl. Phys. Lett. 69 337
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 337
-
-
Ponce, F.A.1
Bour, D.P.2
Young, W.T.3
Saunders, M.4
Steeds, J.W.5
-
12
-
-
0001224325
-
-
Sung M M, Ahn J, Bykov V, Rabalais J W, Koleske D D and Wickenden A E 1996 Phys. Rev. B 54 14 652
-
(1996)
Phys. Rev. B
, vol.54
, pp. 14652
-
-
Sung, M.M.1
Ahn, J.2
Bykov, V.3
Rabalais, J.W.4
Koleske, D.D.5
Wickenden, A.E.6
-
18
-
-
0002808273
-
-
Melnik Yu V, Vassilevski K V, Nikitina I P, Babinin A I, Davydov Yu V and Dimitriev V A 1997 MRS-Internet J. Nitride Semicond. 2 39
-
(1997)
MRS-Internet J. Nitride Semicond.
, vol.2
, pp. 39
-
-
Melnik, Yu.V.1
Vassilevski, K.V.2
Nikitina, I.P.3
Babinin, A.I.4
Davydov, Yu.V.5
Dimitriev, V.A.6
-
19
-
-
0026414655
-
-
Hiramatsu K, Itoh S, Amano H, Akasaki I, Kuwano N, Shiraishi T and Oki K 1991 J. Crystal Growth 115 628
-
(1991)
J. Crystal Growth
, vol.115
, pp. 628
-
-
Hiramatsu, K.1
Itoh, S.2
Amano, H.3
Akasaki, I.4
Kuwano, N.5
Shiraishi, T.6
Oki, K.7
-
27
-
-
0001132782
-
-
Qian W, Rohrer G S, Skowronski M, Doverspike K, Rowland L B and Gaskill D K 1995 Appl. Phys. Lett. 67 2284
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 2284
-
-
Qian, W.1
Rohrer, G.S.2
Skowronski, M.3
Doverspike, K.4
Rowland, L.B.5
Gaskill, D.K.6
-
28
-
-
0030388476
-
-
Pittsburgh, PA: Materials Research Society
-
Liliental-Weber Z, Ruvimov S, Suski T, Ager III J W, Swider W, Washburn J, Amano H, Akasaki I and Imler W 1996 Mater. Res. Soc. Symp. Proc. vol 423 (Pittsburgh, PA: Materials Research Society) p 487
-
(1996)
Mater. Res. Soc. Symp. Proc.
, vol.423
, pp. 487
-
-
Liliental-Weber, Z.1
Ruvimov, S.2
Suski, T.3
Ager Iii, J.W.4
Swider, W.5
Washburn, J.6
Amano, H.7
Akasaki, I.8
Imler, W.9
-
30
-
-
0040081289
-
-
Smith A R, Feenstra R M, Greve D W, Shin M S, Skowronski M, Neugebauer J and Northrop J E 1998 Appl. Phys. Lett. 72 2114
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 2114
-
-
Smith, A.R.1
Feenstra, R.M.2
Greve, D.W.3
Shin, M.S.4
Skowronski, M.5
Neugebauer, J.6
Northrop, J.E.7
-
31
-
-
0001631043
-
-
Kazimirov A, Scherb G, Zegenhagen J, Lee T L, Bedzyk M J, Kelly M K, Angerer H and Ambacher O 1998 J. Appl. Phys. 84 1703
-
(1998)
J. Appl. Phys.
, vol.84
, pp. 1703
-
-
Kazimirov, A.1
Scherb, G.2
Zegenhagen, J.3
Lee, T.L.4
Bedzyk, M.J.5
Kelly, M.K.6
Angerer, H.7
Ambacher, O.8
-
35
-
-
0030659347
-
-
Pittsburgh, PA: Materials Reseach Society
-
Denecke R, Morais J, Wetzel C, Liesegang J, Haller E E and Fadley C S 1997 Mater. Res. Soc. Symp. Proc. vol 468 (Pittsburgh, PA: Materials Reseach Society) p 143
-
(1997)
Mater. Res. Soc. Symp. Proc.
, vol.468
, pp. 143
-
-
Denecke, R.1
Morais, J.2
Wetzel, C.3
Liesegang, J.4
Haller, E.E.5
Fadley, C.S.6
-
36
-
-
0000984414
-
-
Ahn J, Sung M M, Rabalais J W, Koleske D D and Wickenden A E 1997 J. Chem. Phys. 107 9577
-
(1997)
J. Chem. Phys.
, vol.107
, pp. 9577
-
-
Ahn, J.1
Sung, M.M.2
Rabalais, J.W.3
Koleske, D.D.4
Wickenden, A.E.5
-
37
-
-
0001716964
-
-
Seelmann-Eggebert M, Weyher J L, Obloh H, Zimmermann H, Rar A and Porowski S 1997 Appl. Phys. Lett. 71 2635
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 2635
-
-
Seelmann-Eggebert, M.1
Weyher, J.L.2
Obloh, H.3
Zimmermann, H.4
Rar, A.5
Porowski, S.6
-
39
-
-
4244083530
-
-
Smith A R, Feenstra R M, Grewe D W, Neugebauer J and Northrop J E 1997 Phys. Rev. Lett. 79 3934
-
(1997)
Phys. Rev. Lett.
, vol.79
, pp. 3934
-
-
Smith, A.R.1
Feenstra, R.M.2
Grewe, D.W.3
Neugebauer, J.4
Northrop, J.E.5
-
43
-
-
5544229420
-
-
Schaefer J A, Allinger Th, Stuhlmann Ch, Beckers U and Ibach H 1991 Surf. Sci. 251/252 1000 report a Ga-H stretching frequency on GaAs(100) of between 230 and 236 meV, depending on hydrogen exposure
-
(1991)
Surf. Sci.
, vol.251-252
-
-
Schaefer, J.A.1
Allinger, Th.2
Stuhlmann, Ch.3
Beckers, U.4
Ibach, H.5
-
47
-
-
84912605555
-
-
Frankel D J et al 1985 J. Vac. Sci. Technol. B 3 1093 report a Ga-H stretching frequency on GaAs(111) (Ga face) of between 224 and 234 meV depending on hydrogen exposure.
-
(1985)
J. Vac. Sci. Technol. B
, vol.3
, pp. 1093
-
-
Frankel, D.J.1
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