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Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 371-375

Hydrogen behavior in GaN epilayers grown by NH3-MBE

(4) Kong, Mei Ying a Zhang, Jian Ping a Wang, Xiao Liang a Sun, Dian Zhao a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

A1. Impurities; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; IMPURITIES; MOLECULAR BEAM EPITAXY; NITRIDES; RAMAN SPECTROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; X RAY PHOTOELECTRON SPECTROSCOPY;

EPILAYERS; NUCLEAR REACTION ANALYSIS (NRA);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 7644227700 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00726-6 Document Type: Conference Paper

Times cited : (20)

References (21)

1
- 0029346154
- (1995) Jpn. J. Appl. Phys. , vol.74
- Nakamura¹ Senoh, M.² Iwasa, N.³ Nagahama, S.⁴

2
- 0000347988
- (1997) Appl. Phys. Lett. , vol.70 , pp. 1417
- Nakamura, S.¹ Senoh, M.² Nagahama, S.³ Iwasa, N.⁴ Yamada, T.⁵ Matsushita, T.⁶ Sugimoto, Y.⁷ Kiyoku, H.⁸

3
- 0032606388
- (1999) Appl. Phys. Lett. , vol.74 , pp. 3531
- Wang, T.¹ Ohno, Y.² Lachab, M.³ Nakagawa, D.⁴ Sakai, S.⁵ Ohno, H.⁶

4
- 0030705339
- (1997) Phys. State Solidi A , vol.159 , pp. 105
- Ambacher, O.¹ Angerer, H.² Oimitrov, R.³ Rieger, W.⁴ Stutzmann, M.⁵ Dollinger, G.⁶ Bergmaier, A.⁷

5
- 0032092388
- (1998) J. Crystal Growth , vol.189-190 , pp. 566
- Zhang, J.-P.¹ Wang, X.-L.² Sun, D.-Z.³ Li, X.-B.⁴ Kong, M.-Y.⁵

6
- 0032475027
- (1998) J. Crystal Growth , vol.192 , pp. 93
- Zhang, J.-P.¹ Sun, D.-Z.² Li, X.-B.³ Wang, X.-L.⁴ Fu, R.-H.⁵ Kong, M.-Y.⁶

7
- 36749111128
- (1977) Appl. Phys. Lett. , vol.30 , pp. 561
- Brodsky, M.H.¹ Frisch, M.A.² Ziegler, J.F.³

8
- 0005985130
- (1999) J. Appl. Phys. , vol.86 , pp. 1
- Pearton, S.J.¹ Zolper, J.C.² Shul, R.J.³ Ren, F.⁴

9
- 0041601160
- (1996) Appl. Phys. Lett. , vol.68 , pp. 1829
- Neugebauer, J.¹ Van de Walle, C.G.²

10
- 5544310194
- (1973) J. Phys. Chem. Solids , vol.34 , pp. 885
- Ilegems, M.I.¹ Montgomery, H.C.²

11
- 5644231961
- (1994) Phys. Rev. B , vol.50 , pp. 8067
- Neugebauer, J.¹ Van de Walle, C.G.²

12
- 0019070097
- (1980) Phys. State Solidi A , vol.61 , pp. 493
- Seifert, W.¹ Bruhl, H.-G.² Fitzl, G.³

13
- 0001449152
- (1997) Phys. Rev. Lett. , vol.78 , pp. 3923
- Wetzel, C.¹ Suski, T.² Ager III, J.W.³ Weber, E.R.⁴ Haller, E.E.⁵ Fischer, S.⁶ Meyer, B.K.⁷ Molnar, R.J.⁸ Perlin, P.⁹

14
- 2442437702
- (1996) Appl. Phys. Lett. , vol.69 , pp. 3725
- Gotz, W.¹ Johnson, N.W.² Bour, D.P.³ McCluskey, M.D.⁴ Haller, E.E.⁵

15
- 0004317070
- PHI 5300 Instrument Manual

16
- 49849109473
- (1970) Solid State Commun. , vol.8 , pp. 1227
- Manchon D.D., Jr.¹ Barker A.S., Jr.² Dean, P.J.³ Zetterstrom, R.B.⁴

17
- 0000828113
- (1972) Phys. Rev. B , vol.5 , pp. 580
- Cerderia, F.¹ Buchenauer, C.J.² Pollak, F.H.³ Cardona, M.⁴

18
- 0024766796
- (1989) J. Crystal Growth , vol.98 , pp. 209
- Akasaki, I.¹ Amano, H.² Koide, Y.³ Hiramatsu, K.⁴ Sawaki, N.⁵

19
- 0342840996
- (1995) J. Appl. Phys. , vol.77 , pp. 4389
- Kozawa, T.¹ Kachi, T.² Kano, H.³ Nagase, H.⁴ Koide, N.⁵ Manabe⁶

20
- 0001164445
- (1997) Appl. Phys. Lett. , vol.70 , pp. 1122
- Schwarz, R.B.¹ Khachaturyan, K.² Weber, E.R.³

21
- 0000202222
- (1996) Phys. Rev. B , vol.54 , pp. 8516
- Chen, N.F.¹ Wang, Y.T.² He, H.J.³ Lin, L.Y.⁴

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