Stability and electronic properties of native defects and substitutional impurities in GaN nanotubes

Journal of Applied Physics

Volumn 104, Issue 3, 2008, Pages

  Colussi, M L ^a   Baierle, R J ^a   Miwa, R H ^b  

^a FEDERAL UNIVERSITY OF SANTA MARIA   (Brazil)

^b FEDERAL UNIVERSITY OF UBERLÂNDIA   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; MAGNETIC MOMENTS; MAGNETISM; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTUBES; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPIN DYNAMICS; SYSTEM STABILITY; VACANCIES;

ANTISITES; BAND GAPS; BULK GAN; BULK PHASE; CHARGE STATES; CHARGED DEFECTS; ELECTRONIC LEVELS; FORMATION ENERGIES; GAN NANOTUBES; NANO TUBE; NATIVE DEFECTS; SPIN-POLARIZED DENSITY-FUNCTIONAL THEORY; SPIN-SPLITTING; SUBSTITUTIONAL IMPURITIES;

DEFECTS;

EID: 49749104909     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2963698     Document Type: Article

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