Scanning tunneling microscopy of the GaN(0001) surface

Superlattices and Microstructures

Volumn 20, Issue 2, 1996, Pages 145-148

  Packard, William E ^a   Dow, John D ^a   Nicolaides, Ruth ^b   Doverspike, Kathleen ^c,d   Kaplan, Ray ^c  

^a ARIZONA STATE UNIVERSITY   (United States)

^b Institute for Postdoctoral Studies   (Virgin Islands (U.S.))

^c NAVAL RESEARCH LABORATORY   (United States)

^d HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; HEAT TREATMENT; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE; THIN FILMS;

LINE DEFECTS; WURTZITE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029767745     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0060     Document Type: Article

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