First-principles study for molecular beam epitaxial growth of GaN(0 0 0 1)

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 447-452

  Ishii, A ^a,b  

^a TOTTORI UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Epitaxial growth; Metal organic vapor phase epitaxy; Molecular beam epitaxy

Indexed keywords

ATOMS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; NITROGEN;

MOLECULAR BEAM EPITAXIAL GROWTH;

GALLIUM NITRIDE;

EID: 0038345939     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00393-3     Document Type: Conference Paper

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