Plasma etch-induced conduction changes in gallium nitride

Journal of Electronic Materials

Volumn 28, Issue 3, 1999, Pages 314-318

  Eddy Jr , C R ^a,b   Molnar, B ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC POTENTIAL; ELECTRON CYCLOTRON RESONANCE; ELECTRON TRANSPORT PROPERTIES; NITRIDES; PLASMA ETCHING; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE ROUGHNESS;

ELECTRON CYCLOTRON RESONANCE MICROWAVE PLASMA REACTIVE ION ETCHING; GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0032638598     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0033-y     Document Type: Article

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