Scanning tunneling microscopy characterization of metalorganic chemical vapor deposition grown GaN

Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 414-418

  Horn, Joachim ^a   Pavlidis, Dimitris ^b   Park, Yongjo ^b   Hartnagel, Hans L ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b The Department of Civil and Environmental Engineering   (United States)

Author keywords

Atomic force microscopy; Scanning tunneling microscopy; X ray spectrum

Indexed keywords

ATOMIC FORCE MICROSCOPY; ENERGY GAP; FILM GROWTH; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

FULL WIDTH HALF MAXIMUM (FWHM); HALL MEASUREMENTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0043266343     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0921-5107(96)01791-6     Document Type: Article

References (5)

1. K. Wang, D. Pavlidis and J. Singh, Atomic Force Microscopy and Growth Modeling of GaN Nucleation Layers on (001) GaAs by Metalorganic Chemical Vapor Deposition. 22nd Int. Symp. on Compound Semiconductors, Cheju Island, Japan, August 1995.
2. J. Horn, R. Richter, H.L. Hartnagel, Ch. Sprößler, M. Bischoff and H. Pagnia, Studies of GaAs surfaces by scanning tunneling induced photon emission. Mater. Sci. Eng., B20 (1993) 183.
3. M. Stehle, M. Bischoff, H. Pagnia, J. Horn, N. Marx, B.L. Weiss and H.L. Hartnagel, Time-resolved luminescence measurements on GaAs homostructures using pulse excitation of a scanning tunneling microscope. J. Vac. Sci. Technol. B, 13 (1995) 305.
4. Gregor S. Hsiao, Reginald M. Penner and Jeff Kingsley, Deposition of metal nanostructures onto Si(111) surfaces by field evaporation in the scanning tunneling microscope. Appl. Phys. Lett., 64 (1994) 1350.
5. J.A. Stroscio and W.J. Kaiser (eds.), Scanning Tunneling Microscopy, Academic Press, San Diego, 1993, pp. 95-147.