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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 7 B, 2002, Pages

First-principles calculation of the epitaxial growth of GaN(0001)

(3) Ishii, Akira a,b Miyake, Daisuke a Aisaka, Tsuyoshi a

a TOTTORI UNIVERSITY (Japan)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

2 2; Ga adsorption; Ga rich first principle calculations; GaN(0001); MBE; N adsorption

Indexed keywords

ADSORPTION; CALCULATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE STRUCTURE;

ADATOMS; BRILLOUIN ZONE; DENSITY FUNCTIONAL THEORY; LATTICE MISMATCH;

GALLIUM NITRIDE;

EID: 0037101405 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.l842 Document Type: Letter

Times cited : (19)

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