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Volumn 293, Issue 2, 2006, Pages 462-468

Nearly stress-free substrates for GaN homoepitaxy

Author keywords

A1. Cathodoluminescence; A1. High resolution X ray diffraction; A1. Photoluminescence; A1. Stress; A3. Hydride vapor phase epitaxy; B1. III Nitrides

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL DEFECTS; PHOTOLUMINESCENCE; SAPPHIRE; VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

EID: 33746390958     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.05.058     Document Type: Article
Times cited : (46)

References (38)
  • 5
    • 33746389128 scopus 로고    scopus 로고
    • W. Thang, B.K. Meyer, Phys. Stat. Sol. (c) (2003) 1571.
  • 30
    • 0343546070 scopus 로고
    • Edgar J.H. (Ed), INSPEC, London
    • In: Edgar J.H. (Ed). Group III Nitrides (1994), INSPEC, London
    • (1994) Group III Nitrides


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.