Depth and thermal stability of dry etch damage in GaN Schottky diodes

Applied Physics Letters

Volumn 75, Issue 2, 1999, Pages 232-234

  Cao, X A ^a   Cho, H ^a   Pearton, S J ^a   Dang, G T ^a   Zhang, A P ^a   Ren, F ^a   Shul, R J ^b   Zhang, L ^b   Hickman, R ^c   Van Hove, J M ^c  

^a University of Florida   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c SVT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DRY ETCHING; HYDROGEN; NITROGEN; PASSIVATION; PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMODYNAMIC STABILITY;

AMMONIUM SULFIDE; GALLIUM NITRIDE;

SCHOTTKY BARRIER DIODES;

EID: 0032613608     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124332     Document Type: Article

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