Nitride nanocolumns for the development of light-emitting diode

IEEE Transactions on Electron Devices

Volumn 57, Issue 1, 2010, Pages 71-78

  Tang, Tsung Yi ^a   Lin, Cheng Hung ^a   Chen, Yung Sheng ^a   Shiao, Wen Yu ^a   Chang, Wen Ming ^a   Liao, Che Hao ^a   Shen, Kun Ching ^a   Yang, Chih Chung ^a   Hsu, Ming Chi ^b   Yeh, Jui Hung ^b   Hsu, Ta Cheng ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b EPISTAR CORPORATION   (Taiwan)

Author keywords

Coalescence overgrowth; Light emitting diode (LED); Nitride nanocolumn (NC)

Indexed keywords

BLUE LEDS; DENSITY REDUCTION; EMISSION EFFICIENCIES; EMISSION ENHANCEMENT; GAN TEMPLATE; GREEN LEDS; INGAN/GAN; LATERAL DOMAINS; LED STRUCTURE; LIGHT-EMITTING DIODE (LED); NANO-COLUMNS; NANOCOLUMN; OUTPUT INTENSITY; QUANTUM WELL; THREADING DISLOCATION;

COALESCENCE; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION;

LIGHT EMITTING DIODES;

EID: 73349109112     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2034795     Document Type: Article

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