Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy

Journal of Applied Physics

Volumn 98, Issue 12, 2005, Pages

  Yun, F ^a   Moon, Y T ^a   Fu, Y ^a   Zhu, K ^a   Ozgur U ^a   Morko H ^a   Inoki, C K ^b   Kuan, T S ^b   Sagar, Ashutosh ^c   Feenstra, R M ^c  

^a Virginia Commonwealth University   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN NUCLEATION LAYERS; ORGANOMETALLIC VAPOR-PHASE EPITAXY; TRANSMISSION ELECTRON MICROSCOPE;

AMMONIA; EPITAXIAL GROWTH; NUCLEATION; ORGANOMETALLICS; SILANES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

ELECTROLYTIC REDUCTION;

EID: 29744444680     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2142074     Document Type: Review

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