Molecular beam epitaxial growth of high-quality GaN nanocolumns

Journal of Crystal Growth

Volumn 287, Issue 2, 2006, Pages 500-503

  Van Nostrand, J E ^a   Averett, K L ^a   Cortez, R ^a   Boeckl, J ^a   Stutz, C E ^a   Sanford, N A ^b   Davydov, A V ^b   Albrecht, J D ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

A1. GaN photoluminescence; A1. Transmission electron microscopy; B1. GaN nanocolumns

Indexed keywords

EPITAXIAL GROWTH; GALLIUM NITRIDE; LOW TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; PLASMAS; TRANSMISSION ELECTRON MICROSCOPY;

GAN PHOTOLUMINESCENCE; OPTICAL STUDIES; REFLECTION MEASUREMENTS;

MOLECULAR BEAM EPITAXY;

EID: 30344440708     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.11.073     Document Type: Conference Paper

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