Dislocation effect on light emission efficiency in gallium nitride

Applied Physics Letters

Volumn 81, Issue 25, 2003, Pages 4721-4723

  Karpov, Sergey Yu ^a   Makarov, Yuri N ^b  

^a SOFT IMPACT LTD   (Russian Federation)

^b Semiconduct Technol Research Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CARRIER CONCENTRATION; GALLIUM NITRIDE; LIGHT EMISSION; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES;

CARRIER DIFFUSION;

DISLOCATIONS (CRYSTALS);

EID: 0037449316     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1527225     Document Type: Article

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