Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template

Applied Physics Letters

Volumn 93, Issue 8, 2008, Pages

  Chiu, C H ^a   Yen, H H ^a   Chao, C L ^a   Li, Z Y ^a   Yu, Peichen ^a   Kuo, H C ^a   Lu, T C ^a   Wang, S C ^a   Lau, K M ^b   Cheng, S J ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; ELECTROMAGNETIC WAVES; EPITAXIAL GROWTH; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; MICROSCOPIC EXAMINATION; NANORODS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; ORGANIC LIGHT EMITTING DIODES (OLED); SAPPHIRE; SEMICONDUCTING GALLIUM; STACKING FAULTS;

GAN-BASED LIGHT-EMITTING DIODES; NANO SCALING;

GALLIUM ALLOYS;

EID: 51349168075     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2969062     Document Type: Article

References (16)

1. J. Han, M. H. Crawford, R. J. Shul, J. J. Figiel, L. Zhang, Y. K. Song, H. Zhou, and A. V. Nurmikko, Appl. Phys. Lett. 0003-6951 10.1063/1.122246 73, 1688 (1998).
2. Y. Narukawa, I. Niki, K. Izuno, M. Yamada, Y. Murazki, and T. Mukai, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.41.L371 41, L371 (2002).
3. E. F. Schubert, Light Emitting Diodes, 1st ed. (Cambridge University Press, Cambridge, England, 2003).
4. A. Sakai, H. Sunakawa, and A. Usui, Appl. Phys. Lett. 0003-6951 10.1063/1.120044 71, 2259 (1997).
5. T. S. Zheleva, O. H. Nam, M. D. Bremser, and R. F. Davis, Appl. Phys. Lett. 0003-6951 10.1063/1.120091 71, 2472 (1997).
6. D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, Appl. Phys. Lett. 0003-6951 10.1063/1.2363148 89, 161105 (2006).
7. D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, R. H. Horng, Y. S. Yu, and M. H. Pan, J. Electrochem. Soc. 0013-4651 10.1149/1.2209587 153, G765 (2006).
8. H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, and G. Wang, J. Appl. Phys. 0021-8979 10.1063/1.2830981 103, 014314 (2008).
9. A. Xing, M. Davanco, D. J. Blumenthal, and E. L. Hu, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1635848 22, 70 (2004).
10. H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, and S. C. Wang, Nanotechnology 0957-4484 10.1088/0957-4484/19/18/185301 19, 185301 (2008).
11. Y. J. Lee, H. C. Kuo, T. C. Lu, and S. C. Wang, IEEE J. Quantum Electron. 0018-9197 10.1109/JQE.2006.883468 42, 1196 (2006).
12. Z. H. Feng, Y. D. Qi, Z. D. Lu, and K. M. Lau, J. Cryst. Growth 272, 327 (2004). 0022-0248
13. T. Nagai, T. Kawashima, M. Imura, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, J. Cryst. Growth 298, 288 (2007). 0022-0248
14. H. K. Cho, J. Y. Lee, K. S. Kim, G. M. Yang, J. H. Song, and P. W. Yu, J. Appl. Phys. 0021-8979 10.1063/1.1344213 89, 2617 (2001).
15. K. Kusakabe, A. Kikuchi, and K. Kishino, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.40.L192 40, L192 (2001).
16. K. Ueda, Y. Tsuchida, N. Hagura, F. Iskandar, K. Okuyama, and Y. Endo, Appl. Phys. Lett. 0003-6951 10.1063/1.2891067 92, 101101 (2008).