Wurtzite GaN nanocolumns grown on Si(001) by molecular beam epitaxy

Applied Physics Letters

Volumn 88, Issue 21, 2006, Pages

  Cerutti, L ^a   Ristic J ^a   Fernandez Garrido S ^a   Calleja, E ^a   Trampert, A ^b   Ploog, K H ^b   Lazic, S ^c   Calleja, J M ^c  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; RAMAN SCATTERING;

CRYSTAL QUALITY; EXCITONIC EMISSIONS; GAN NANOCOLUMNS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

GALLIUM NITRIDE;

EID: 33744533193     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2204836     Document Type: Article

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