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Volumn 21, Issue 23, 2009, Pages 2416-2420

Nanowire-templated lateral epitaxial growth of low-dislocation density nonpolar a-plane GaN on r-plane sapphire

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE GAN; CARRIER GAS; ELECTRON BEAM EVAPORATORS; GAN FILM; GAN GROWTH; GAN NANOWIRES; HETEROEPITAXIAL SYSTEMS; INTERFACIAL STRAIN; LATERAL EPITAXIAL GROWTHS; LOW-DISLOCATION DENSITY; NANOWIRE ARRAYS; NON-POLAR; PLANE SAPPHIRE; R-SAPPHIRE; SAPPHIRE WAFER; TEMPERATURE RANGE; TEMPLATED; THERMAL EXPANSION COEFFICIENTS; VERTICALLY ALIGNED;

EID: 67649360272     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200802532     Document Type: Article
Times cited : (53)

References (31)
  • 30
    • 0036684068 scopus 로고    scopus 로고
    • S. D. Hersée, D. Zubia, X. Y. Sun, R. Bommena, M. Fairchild, S. Zhang, D. Burckel, A. Frauenglass, S. R. J. Brueck, IEEE J. Quantum Eledron. 2002,38, 1017.
    • S. D. Hersée, D. Zubia, X. Y. Sun, R. Bommena, M. Fairchild, S. Zhang, D. Burckel, A. Frauenglass, S. R. J. Brueck, IEEE J. Quantum Eledron. 2002,38, 1017.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.